参数资料
型号: TC58FVT321-10
厂商: Toshiba Corporation
英文描述: 32M Bit (4M×8Bits ) CMOS Flash Memory(4M×8位CMOS闪速存储器)
中文描述: 32兆位(4米× 8位)的CMOS闪存(4米× 8位的CMOS闪速存储器)
文件页数: 27/46页
文件大小: 518K
代理商: TC58FVT321-10
TC58FVT321/B321FT-10
2000-08-30 27/46
Program/Erase Suspend Operation
Program/Erase Resume Operation
Address
CE
WE
D
IN
D
OUT
B0H
D
OUT
RA: Read address
OE
Hi-Z
BY
/
RY
t
CE
t
OE
t
SUSP
/t
SUSE
Suspend Mode
Program/Erase Mode
Hi-Z
RA
BK
Address
CE
WE
D
IN
D
OUT
PA: Program address
BK: Bank address
BA: Block address
RA: Read address
Flag: Hardware Sequence flag
OE
Hi-Z
BY
/
RY
30H
Program/Erase Mode
Suspend Mode
Hi-Z
RA
PA/BA
t
OES
t
DF1
t
DF2
D
OUT
Flag
t
CE
t
OE
BK
t
RESP
/t
RESE
相关PDF资料
PDF描述
TC58FV321 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY
TC58NS256DC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT (32M ?8 BITS) CMOS NAND E2PROM (32M BYTE SmartMediaTM)
TC58V32ADC 32M Bit (4M×8Bits ) CMOS Flash Memory(4M×8位CMOS闪速存储器)
TC59RM716RB-6 128M Bits(256K x16x32Banks)DRAM(128M位(256K x16x32组)动态RAM)
TC59RM716RB-7 128M Bits(256K x16x32Banks)DRAM(128M位(256K x16x32组)动态RAM)
相关代理商/技术参数
参数描述
TC58FVT321-70 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY
TC58FVT321FT-10 制造商:Toshiba America Electronic Components 功能描述:Flash Mem Parallel 3V/3.3V 32M-Bit 4M x 8/2M x 16 100ns 48-Pin TSOP-I
TC58FVT321FT-70 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY
TC58FVT321XB 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY
TC58FVT321XB-10 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY