- 您现在的位置：买卖IC网 > PDF目录384954 > TC58FVT321-10 (Toshiba Corporation) 32M Bit (4M×8Bits ) CMOS Flash Memory(4M×8位CMOS闪速存储器) PDF资料下载
参数资料
| 型号： | TC58FVT321-10 |
| 厂商： | Toshiba Corporation |
| 英文描述： | 32M Bit (4M×8Bits ) CMOS Flash Memory(4M×8位CMOS闪速存储器) |
| 中文描述： | 32兆位（4米× 8位）的CMOS闪存（4米× 8位的CMOS闪速存储器） |
| 文件页数： | 15/46页 |
| 文件大小： | 518K |
| 代理商： | TC58FVT321-10 |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页当前第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页第44页第45页第46页
TC58FVT321/B321FT-10
2000-08-30 15/46
HARDWARE SEQUENCE FLAGS
The TC58FVT321/B321 has a Hardware Sequence flag which allows the device status to be determined during an
auto mode operation. The output data is read out using the same timing as that used when CE
=
OE
=
V
IL
in
Read Mode. The
BY
/
RY
output can be either High or Low.
The device re-enters Read Mode automatically after an auto mode operation has been completed successfully. The
Hardware Sequence flag is read to determine the device status and the result of the operation is verified by
comparing the read-out data with the original data.
STATUS
DQ7
DQ6
DQ5
DQ3
DQ2
BY
/
RY
Auto Programming
7
DQ
Toggle
0
0
1
0
Read in Program Suspend
(1)
Data
Data
Data
Data
Data
High-Z
Selected
(2)
0
Toggle
0
0
Toggle
0
Erase Hold Time
Not-selected
(3)
0
Toggle
0
0
1
0
Selected
0
Toggle
0
1
Toggle
0
In Auto
Erase
Auto Erase
Not-selected
0
Toggle
0
1
1
0
Selected
1
1
0
0
Toggle
High-Z
Read
Not-selected
Data
Data
Data
Data
Data
High-Z
Selected
7
DQ
Toggle
0
0
Toggle
0
In Progress
In Erase
Suspend
Programming
Not-selected
7
DQ
Toggle
0
0
1
0
Auto Programming
7
DQ
Toggle
1
0
1
0
Auto Erase
0
Toggle
1
1
NA
0
Time Limit
Exceeded
Programming in Erase Suspend
7
DQ
Toggle
1
0
NA
0
Notes: DQ outputs cell data and
DQ0 and DQ1 pins are reserved for future use.
0 is output on DQ0, DQ1 and DQ4.
(1) Data output from an address to which Write is being performed is undefined.
(2) Output when the block address selected for Auto Block Erase is specified and data is read from there.
During Auto Chip Erase, all blocks are selected.
(3) Output when a block address not selected for Auto Block Erase
of same bank as selected block is specified and data is
read from there.
BY
/
RY
goes High-Impedence when the operation has
been completed.
DQ7 ( polling)
DATA
During an Auto-Program or auto-erase operation, the device status can be determined using the data polling
function. DATA polling begins on the rising edge of WE in the last bus cycle. In an Auto-Program operation,
DQ7 outputs inverted data during the programming operation and outputs actual data after programming has
finished. In an auto-erase operation, DQ7 outputs 0 during the Erase operation and outputs 1 when the Erase
operation has finished. If an Auto-Program or auto-erase operation fails, DQ7 simply outputs the data.
When the operation has finished, the address latch is reset. Data polling is asynchronous with the OE signal.
相关PDF资料 |
PDF描述 |
|---|---|
| TC58FV321 | TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY |
| TC58NS256DC | TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT (32M ?8 BITS) CMOS NAND E2PROM (32M BYTE SmartMediaTM) |
| TC58V32ADC | 32M Bit (4M×8Bits ) CMOS Flash Memory(4M×8位CMOS闪速存储器) |
| TC59RM716RB-6 | 128M Bits（256K x16x32Banks）DRAM(128M位（256K x16x32组）动态RAM) |
| TC59RM716RB-7 | 128M Bits（256K x16x32Banks）DRAM(128M位（256K x16x32组）动态RAM) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| TC58FVT321-70 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY |
| TC58FVT321FT-10 | 制造商:Toshiba America Electronic Components 功能描述:Flash Mem Parallel 3V/3.3V 32M-Bit 4M x 8/2M x 16 100ns 48-Pin TSOP-I |
| TC58FVT321FT-70 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY |
| TC58FVT321XB | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY |
| TC58FVT321XB-10 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY |
发布紧急采购，3分钟左右您将得到回复。