参数资料
| 型号： | TISP61089BSDR-S |
| 厂商： | Bourns Inc. |
| 文件页数： | 1/20页 |
| 文件大小： | 0K |
| 描述： | PROTECTOR QUAD PROGRAMMABLE |
| 标准包装： | 2,500 |
| 电压 - 击穿： | 64V |
| 电压 - 断路： | 170V |
| 电流 - 峰值脉冲(10 x 1000µs)： | 30A |
| 电流 - 保持 (Ih)： | 150mA |
| 元件数： | 2 |
| 电容： | 100pF |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 包装： | 带卷 (TR) |
TISP61089BSD
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS
PROGRAMMABLE OVERVOLTAGE PROTECTORS
TISP61089BSD High Voltage Ringing SLIC Protector
Dual Voltage-Programmable Protectors
- Supports Battery Voltages Down to -155 V
8-SOIC Package (Top View)
- Low 5 mA max. Gate Triggering Current
(Tip)
K1
1
8
NC
- High 150 mA min. Holding Current
Rated for LSSGR ‘1089 Conditions
2/10 Overshoot Voltage Specified
(Gate)
(Ring)
G
NC
K2
2
3
4
7
6
5
A
A
NC
(Ground)
(Ground)
Impulse
'1089 Test
I TSP
MD6XBE
Waveshape
2/10
10/360
10/1000
Section
4.5.7
4.5.8
4.5.7
4.5.7
Test #
4
1
2, 5
1,3
A
120
30
30
NC - No internal connection
Terminal typical application names shown in
parenthesis
Device Symbol
K1
60 Hz Power
'1089 Test
I TSM
Fault Time
Section
Test #
A
A
0.5 s
1s
2s
5s
30 s
4.5.12
4.5.12
4.5.12
4.5.12
4.5.13
4.5.12
9
3, 4, 8
7
5
2, 3
6
6.5
4.6
3.4
2.3
1.3
G
K2
Rated for ITU-T K.20, K.21 and K.45
A
SD6XAU
4.5.12
1, 2
900 s
4.5.13
4.5.15/16
1, 4, 5
0.73
Waveshape
Voltage
Current
I TSP
A
Element
Diode
I TM = 100 A, di/dt = 80 A/ μ s
V
10
10/700
5/310
40
SCR
How to Order
12
..................................................UL Recognized Component
Device
TISP61089BSD
Package
8-SOIC
Carrier
Embossed Tape Reeled
Order As
TISP61089BSDR-S
Marking Code
1089BS
Standard Quantity
2500
Description
The TISP61089BSD is a dual forward-conducting buffered p-gate thyristor (SCR) overvoltage protector. It is designed to protect monolithic
SLICs (Subscriber Line Interface Circuits) against overvoltages on the telephone line caused by lightning, a.c. power contact and induction. The
TISP61089BSD limits voltages that exceed the SLIC supply rail voltage. The TISP61089BSD parameters are specified to allow equipment
compliance with Telcordia GR-1089-CORE, Issue 3 and ITU-T recommendations K.20, K.21 and K.45.
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
SEPTEMBER 2005 - REVISED MAY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
相关PDF资料 |
PDF描述 |
|---|---|
| TISP61089HDMR-S | SURGE PROT THYRIST 155V SLIC |
| TISP61089QDR-S | PROTECTOR PROGRAMMABLE SLIC |
| TISP61089SDR-S | PROTECTOR OVER VOLTAGE |
| TISP6NTP2ADR | SURGE SUPP QUAD PROG SOP |
| TISP6NTP2C-R6-S | SURGE PROTECTOR QUAD PROG 90A |
相关代理商/技术参数 |
参数描述 |
|---|---|
| TISP61089D | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
| TISP61089DR | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
| TISP61089DR-S | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
| TISP61089DS | 制造商:Bourns Inc 功能描述: |
| TISP61089D-S | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
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