参数资料
| 型号： | TISP61089BSDR-S |
| 厂商： | Bourns Inc. |
| 文件页数： | 17/20页 |
| 文件大小： | 0K |
| 描述： | PROTECTOR QUAD PROGRAMMABLE |
| 标准包装： | 2,500 |
| 电压 - 击穿： | 64V |
| 电压 - 断路： | 170V |
| 电流 - 峰值脉冲(10 x 1000µs)： | 30A |
| 电流 - 保持 (Ih)： | 150mA |
| 元件数： | 2 |
| 电容： | 100pF |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 包装： | 带卷 (TR) |
TISP61089BSD High Voltage Ringing SLIC Protector
‘1089 Section 4.5.16 (Continued)
Dedicated intra-building ports may use an R S value of 8 ? . The 8 ? value limits the initial current to 13 A, which is within the TISP61089BSD
single cycle rating. For the TISP61089BSD to survive the full 900 s test, the series overcurrent protection has to operate before the
TISP61089BSD current-time ratings are exceeded.
Overcurrent and Overvoltage Protection Coordination
To meet ‘1089, the overcurrent protection must be coordinated with the requirements of Sections 4.5.7, 4.5.8, 4.5.9, 4.5.12, 4.5.13, 4.5.15 and
the TISP61089BSD. The overcurrent protection must not fail in the first level tests of Sections 4.5.7, 4.5.9 and 4.5.12 (tests 1 through 5). Test 6
through 9 of Section 4.5.12 are not requirements. The test current levels and their duration are shown in Figure 18. First level tests have a high
source resistance and the current levels are not strongly dependent on the TISP61089BSD series resistor value.
Second-level tests have a low source resistance and the current levels are dependent on the TISP61089BSD R S resistor value. The two
stepped lines at the top of Figure 18 are for the 25 ? and 40 ? series resistor cases. The unacceptable current region (Section 4.5.11) is also
shown in Figure 18. If current flows for the full second-level test time the unacceptable current region will be entered. The series overcurrent
protector must operate before the unacceptable region is reached.
MAXIMUM RMS CURRENT
vs
PEAK AC
vs
30
20
10
7
5
3
2
1
TIME
Second Level Tests, 25 ?
Second Level
Tests, 40 ?
Objective
First Level
Tests # 6
through 9
AI6XAKB
Unacceptable
50
40
30
20
15
10
8
6
5
4
3
2
1.5
CURRENT DURATION AI6XDM
Second Level
Tests, 25 ? Unacceptable
Second Level
Tests, 40 ?
V GG = -60 V
0.7
0.5
0.3
0.2
First Level
Tests # 1
through 5,
25 ? & 40 ?
1
0.8
0.6
0.5
0.4
0.3
First Level
Tests # 1
through 5,
25 ? & 40 ?
V GG = -120 V
0.2
0.1
0.01
0.1
1
10
100
1000
0.15
0.01
0.1
1 10 100
1000
Time - s
Figure 18. '1089 Test Current Levels
t — Current Duration — s
Figure 19. TISP61089BSD Overlay
Fusible overcurrent protectors cannot operate at first level current levels. Thus the permissible low current time-current boundary for fusible
overcurrent protectors is formed by the first-level test currents. Automatically resetable overcurrent protectors (e.g. Positive Temperature
Coefficient Thermistors) may operate during first level testing, but normal equipment working must be restored after the test has ended.
At system level, the high current boundary is formed by the unacceptable region. However, component and printed wiring, PW, current
limitations will typically lower the high current boundary. Although the series line feed resistance, R S , limits the maximum available current in
second-level testing, after about 0.5 s this limitation will exceed the acceptable current flow values.
These three boundaries, first-level, second-level and unacceptable, are replotted in terms of peak current rather than rms current values in
Figure 19. Using a peak current scale allows the TISP61089BSD longitudinal current rating curves (Figure 3) to be added to Figure 19.
Assuming the PW is sized to adequately carry any currents that may flow, the high current boundary for the overcurrent protector is formed by
the TISP61089BSD rated current. Note that the TISP61089BSD rated current curve also depends on the value of gate supply voltage
SEPTEMBER 2005 - REVISED MAY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
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| TISP61089D | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
| TISP61089DR | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
| TISP61089DR-S | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
| TISP61089DS | 制造商:Bourns Inc 功能描述: |
| TISP61089D-S | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
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