参数资料
| 型号： | TISP61089BSDR-S |
| 厂商： | Bourns Inc. |
| 文件页数： | 7/20页 |
| 文件大小： | 0K |
| 描述： | PROTECTOR QUAD PROGRAMMABLE |
| 标准包装： | 2,500 |
| 电压 - 击穿： | 64V |
| 电压 - 断路： | 170V |
| 电流 - 峰值脉冲(10 x 1000µs)： | 30A |
| 电流 - 保持 (Ih)： | 150mA |
| 元件数： | 2 |
| 电容： | 100pF |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 包装： | 带卷 (TR) |
TISP61089BSD High Voltage Ringing SLIC Protector
SLIC Parameter Values
The table below shows some details of HV SLICs using multiple negative supply rails.
Manufacturer
SLIC Series
SLIC #
Data Sheet Issue
INFINEON?
SLIC-P?
PEB 4266
14/02/2001
ISLIC??
79R241
-/08/2000
LEGERITY??
79R101
-/07/2000
79R100
-/07/2000
Unit
Short Circuit Current
V BATH max.
V BATL max.
AC Ringing for:
Crest Factor
V BATH
V BATR
110
-155
-150
85
1.4
-70
-150
150
-104
-104
45?
1.4
-90
-36
150
-104
V BATH
50?
1.4
-99
-24
150
-104
V BATH
55?
1.25
-99
-24
mA
V
V
V rms
V
V
R or T Power Max. < 10 ms
10
W
R or T Overshoot < 10 ms
TBD
TBD
-5
5
-10
5
-10
5
V
R or T Overshoot < 1 ms
-10
+10
V
R or T Overshoot < 1 μ s
R or T Overshoot < 250 ns
-10
+30
-10
-15
10
15
-15
-20
8
12
-15
-20
8
12
V
V
Line Feed Resistance
20 + 30
50
50
50
?
? Assumes -20 V battery voltage during ringing.
? Legerity, the Legerity logo and ISLIC are the trademarks of Legerity, Inc. (formerly AMD's Communication Products Division).
Other product names used in this publication are for identification purposes only and may be trademarks of their respective
companies.
From the table, the maximum supply voltage, V BATH , is -155 V. In terms of minimum voltage overshoot limits, -10 V and +8 V are needed for
1 μ s and -15 V, +12 V are needed for 250 ns. To maintain these voltage limits over the temperature range, 25 ° C values of -12 V, +10 V are
needed for 250 ns.
It is important to define the protector overshoot under the actual circuit current conditions. For example, if the series line feed resistor was
40 ? , R1 in Figure 12, and Telcordia GR-1089-CORE 2/10 and 10/1000 first level impulses were applied, the peak protector currents would be
56 A and 20 A. At the second level, the 2/10 impulse current would be 100 A. Therefore, the protector voltage overshoot should be guaranteed
to not exceed the SLIC voltage ratings at 100 A, 2/10 and 20 A, 10/1000. In practice, as the 2/10 waveshape has the highest current (100 A)
and fastest di/dt (80 A/ μ s) the overshoot level testing can restricted to the be 2/10 waveshape.
Using the table values for maximum battery voltage and minimum overshoot gives a protection device requirement of -170 V and +12 V from
the output to ground. There needs to be temperature guard banding for the change in protector characteristics with temperature. To cover
down to -40 °C the 25 °C protector minimum values of become -185 V (V DRM ) on the cathode and -182 V (V GKS ) on the gate.
Gated Protectors
This section covers four topics. Firstly, it is explained why gated protectors are needed. Second, the voltage limiting action of the protector is
described. Third, how the withstand voltages of the TISP61089BSD junctions are set. Fourth, an example application circuit is described.
Purpose of Gated Protectors
Fixed voltage thyristor overvoltage protectors have been used since the early 1980s to protect monolithic SLICs (Subscriber Line Interface
Circuits) against overvoltages on the telephone line caused by lightning, a.c. power contact and induction. As the SLIC was usually powered
from a fixed voltage negative supply rail, the limiting voltage of the protector could also be a fixed value. The TISP1072F3 is a typical example
of a fixed voltage SLIC protector.
SEPTEMBER 2005 - REVISED MAY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
相关PDF资料 |
PDF描述 |
|---|---|
| TISP61089HDMR-S | SURGE PROT THYRIST 155V SLIC |
| TISP61089QDR-S | PROTECTOR PROGRAMMABLE SLIC |
| TISP61089SDR-S | PROTECTOR OVER VOLTAGE |
| TISP6NTP2ADR | SURGE SUPP QUAD PROG SOP |
| TISP6NTP2C-R6-S | SURGE PROTECTOR QUAD PROG 90A |
相关代理商/技术参数 |
参数描述 |
|---|---|
| TISP61089D | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
| TISP61089DR | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
| TISP61089DR-S | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
| TISP61089DS | 制造商:Bourns Inc 功能描述: |
| TISP61089D-S | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
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