参数资料
| 型号： | TISP61089BSDR-S |
| 厂商： | Bourns Inc. |
| 文件页数： | 11/20页 |
| 文件大小： | 0K |
| 描述： | PROTECTOR QUAD PROGRAMMABLE |
| 标准包装： | 2,500 |
| 电压 - 击穿： | 64V |
| 电压 - 断路： | 170V |
| 电流 - 峰值脉冲(10 x 1000µs)： | 30A |
| 电流 - 保持 (Ih)： | 150mA |
| 元件数： | 2 |
| 电容： | 100pF |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 包装： | 带卷 (TR) |
TISP61089BSD High Voltage Ringing SLIC Protector
Application Circuit
Figure 12 shows a typical TISP61089BSD SLIC card protection circuit. The incoming line conductors, Ring (R) and Tip (T), connect to the relay
matrix via the series overcurrent protection. Fusible resistors, fuses and positive temperature coefficient (PTC) resistors can be used for
overcurrent protection. Resistors will reduce the prospective current from the surge generator for both the TISP61089BSD and the ring/test
protector. The TISP7xxxF3 protector has the same protection voltage for any terminal pair. This protector is used when the ring generator
configuration may be ground or battery-backed. For dedicated ground-backed ringing generators, the TISP3xxxF3 gives better protection as
its inter-conductor protection voltage is twice the conductor to ground value.
Relay contacts 3a and 3b connect the line conductors to the SLIC via the TISP61089BSD protector. The protector gate reference voltage
comes from the SLIC negative supply (V BATH ). A 220 nF gate capacitor sources the high gate current pulses caused by fast rising impulses.
LSSGR 1089
GR-1089-CORE, “1089”, covers electromagnetic compatibility and electrical safety generic criteria for US network telecommunication
equipment. It is a module in Volume 3 of LSSGR (LATA (Local Access Transport Area) Switching Systems Generic Requirements, FR-NWT-000064).
In ‘1089 surge and power fault immunity tests are done at two levels. After first-level testing the equipment shall not be damaged and
shall continue to operate correctly. Under second level testing the equipment shall not become a safety hazard. The equipment is permitted to
fail as a result of second-level testing. When the equipment is to be located on customer premises, second-level testing includes a wiring
simulator test, which requires the equipment to reduce the power fault current below certain values.
The following clauses reference the ‘1089 section and calculate the protector stress levels. The TISP61089BSD needs a 40 ? series resistor to
survive second level surge testing.
‘1089 Section 4.5.5 - Test Generators
The generic form of test generator is shown in Figure 13. It emphasizes that multiple outputs must be independent, i.e. the loading condition of
one output must not affect the waveforms of the other outputs. It is a requirement that the open-circuit voltage and short circuit current
waveforms be recorded for each generator output used for testing. The fictive impedance of a generator output is defined as the peak
opencircuit voltage divided by the peak short-circuit current. Specified impulse waveshapes are maximum rise and minimum decay times. Thus
the 10/1000 waveshape should be interpreted as <10/>1000 and not the usually defined nominal values which have a tolerance.
Z
Z
Z
Z
Output 1
Output 2
Output n
Output n + 1
or
Z is the fictive
current-limiting
impedance in
each output feed
Return
Generic Lightning or AC Test Generator
Figure 13. '1089 Test Generators
SEPTEMBER 2005 - REVISED MAY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
AI6XCJ
相关PDF资料 |
PDF描述 |
|---|---|
| TISP61089HDMR-S | SURGE PROT THYRIST 155V SLIC |
| TISP61089QDR-S | PROTECTOR PROGRAMMABLE SLIC |
| TISP61089SDR-S | PROTECTOR OVER VOLTAGE |
| TISP6NTP2ADR | SURGE SUPP QUAD PROG SOP |
| TISP6NTP2C-R6-S | SURGE PROTECTOR QUAD PROG 90A |
相关代理商/技术参数 |
参数描述 |
|---|---|
| TISP61089D | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
| TISP61089DR | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
| TISP61089DR-S | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
| TISP61089DS | 制造商:Bourns Inc 功能描述: |
| TISP61089D-S | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
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