参数资料
| 型号： | TISP61089BSDR-S |
| 厂商： | Bourns Inc. |
| 文件页数： | 13/20页 |
| 文件大小： | 0K |
| 描述： | PROTECTOR QUAD PROGRAMMABLE |
| 标准包装： | 2,500 |
| 电压 - 击穿： | 64V |
| 电压 - 断路： | 170V |
| 电流 - 峰值脉冲(10 x 1000µs)： | 30A |
| 电流 - 保持 (Ih)： | 150mA |
| 元件数： | 2 |
| 电容： | 100pF |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 包装： | 带卷 (TR) |
TISP61089BSD High Voltage Ringing SLIC Protector
‘1089 Section 4.5.6 - Test Connections
The telecommunications port R and T terminals may be tested simultaneously or individually. Figure 14 shows connection for simultaneous
(longitudinal) testing. Figure 15 shows the two connections necessary to individually test the R and T terminals during transverse testing.
The values of protector current are calculated by dividing the open-circuit generator voltage by the total circuit resistance. The total circuit
resistance is the sum of the generator fictive source resistance and the TISP61089BSD series resistor value. The starting point of this analysis
is to calculate the minimum circuit resistance for a test by dividing the generator open-circuit voltage by the TISP61089BSD rating. Subtracting
the generator fictive resistance from the minimum circuit resistance gives the lowest value of series resistance that can be used. This is repeated
for all test connections. As the series resistance must be a fixed value, the value used has to be the highest value calculated from all the
considered test connections. Where both 10/1000 and 2/10 waveshape testing occurs, the 10/1000 test connection gives the highest value of
minimum series resistance. Unless otherwise stated the analysis assumes a -40 ° C to +85 ° C temperature range.
‘1089 Section 4.5.7 - First-Level Lightning Surge Testing
Table 1 shows the tests for this section. The peak TISP61089BSD current, I TM , is calculated by dividing the generator open voltage by the sum
of the generator fictive source and the line feed, R S , resistance values. Columns 9 and 10 show the resultant currents for R S values of 25 ?
and 40 ? . The TISP61089BSD rated current values at the various waveshapes are higher than those listed in Table 1. Used with the specified
values of R S , the TISP61089BSD will survive these tests.
Table 1. First-Level Surge Currents
Surge
#
Waveshape
Open-circuit
Voltage
V
Short-circuit
Current
A
No
of
Tests
Test
Connections
Primary
Fitted
Generator
Fictive
Source
Resistance
?
TISP61089BSD I TM
A
R s = 25 ? R s = 40 ?
1
10/1000
600
100
+25, -25
Transverse &
No
6
19 &
13 &
Longitudinal
2x19
2x13
2
10/360
1000
100
+25, -25
Transverse &
No
10
29 &
20 &
Longitudinal
2x29
2x20
3
10/1000
1000
100
+25, -25
Transverse &
No
10
29 &
20 & 2x20
Longitudinal
2x29
4
5
2/10
10/360
2500
1000
500
25
+10, -10
+5, -5
Longitudinal
Longitudinal
No
No
5
40
2x83
2x15
2x56
2x13
NOTES: 1. Surge 3 may be used instead of Surge 1 and Surge 2.
2. Surge 5 is applied to multiple line pairs up to a maximum of 12.
3. If the equipment contains a voltage-limiting secondary protector, each test is repeated at a voltage just below the threshold of
limiting.
‘1089 Section 4.5.8 - Second-Level Lightning Surge Testing
Table 2 shows the 2/10 test used for this section. Columns 9 and 10 show the resultant currents for R S values of 25 ? and 40 ? . Used with an
R S of 40 ? , the TISP61089BSD will survive this test. The 25 ? value of R S is only intended to give first-level (Section 4.5.7) survival. Under
second-level conditions, the peak current will be 2x143 A, which may result in failure of the 2x120 A rated TISP61089B. However, if the testing
is done at or near 25 ° C, the TISP61089BSD will survive with an R S value of 25 ? as the 2/10 rating is 170 A at this temperature.
Table 2. Second-Level Surge Current
Generator
TISP61089BSD I TM
Surge
#
Waveshape
Open-circuit
Voltage
V
Short-circuit
Current
A
No
of
Tests
Test
Connections
Primary
Fitted
Fictive
Source
Resistance
R s = 25 ?
A
R s = 40 ?
?
1
2/10
5000
500
+1, -1
Longitudinal
No
10
2x143
2x100
NOTE:
1. If the equipment contains a voltage-limiting secondary protector, the test is repeated at a voltage just below the threshold of
limiting.
SEPTEMBER 2005 - REVISED MAY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
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| TISP61089D | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
| TISP61089DR | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
| TISP61089DR-S | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
| TISP61089DS | 制造商:Bourns Inc 功能描述: |
| TISP61089D-S | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
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