参数资料
| 型号： | TISP61089BSDR-S |
| 厂商： | Bourns Inc. |
| 文件页数： | 8/20页 |
| 文件大小： | 0K |
| 描述： | PROTECTOR QUAD PROGRAMMABLE |
| 标准包装： | 2,500 |
| 电压 - 击穿： | 64V |
| 电压 - 断路： | 170V |
| 电流 - 峰值脉冲(10 x 1000µs)： | 30A |
| 电流 - 保持 (Ih)： | 150mA |
| 元件数： | 2 |
| 电容： | 100pF |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 包装： | 带卷 (TR) |
TISP61089BSD High Voltage Ringing SLIC Protector
Gated Protectors (Continued)
SLICs have become more sophisticated. To minimize power consumption, some designs automatically adjust the driver supply voltage to a
value that is just sufficient to drive the required line current. For short lines the supply voltage would be set low, but for long lines, a higher
supply voltage would be generated to drive sufficient line current. The optimum protection for this type of SLIC would be given by a protection
voltage which tracks the SLIC supply voltage. This can be achieved by connecting the protection thyristor gate to the SLIC V BATH supply,
Figure 6. This gated (programmable) protection arrangement minimizes the voltage stress on the SLIC, no matter what value of supply voltage.
TIP
WIRE
600 ?
GENERATOR
SOURCE
RESISTANCE
600 ?
RING
WIRE
R1
40 ?
R2
40 ?
TISP61089BSD
SLIC
V BATL
SWITCHING MODE
POWER SUPPLY
I SLIC
Tx
A.C.
GENERATOR
0 - 600 V r.m.s.
C1
220 nF
I G
V BATH
I BATH
C2
D1
AI6XCCa
Figure 6. TISP61089BSD Buffered Gate Protector ('1089 Section 4.5.12 Testing)
SLIC
PROTECTOR
SLIC
SLIC
PROTECTOR
SLIC
I K
Th5
TISP
61089BSD
I G
I F
Th5
TISP
61089BSD
AI6XAHBa
V BATH
C1
220 nF
AI6XAIBa
V BATH
C1
220 nF
Figure 7. Negative Overvoltage Condition
Figure 8. Positive Overvoltage Condition
Operation of Gated Protectors
Figure 7 and Figure 8 show how the TISP61089BSD limits negative and positive overvoltages. Positive overvoltages (Figure 8) are clipped by
the antiparallel diode of Th5 and the resulting current is diverted to ground. Negative overvoltages (Figure 7) are initially clipped close to the
SLIC negative supply rail value (V BATH ). If sufficient current is available from the overvoltage, then Th5 will switch into a low voltage on-state
condition. As the overvoltage subsides the high holding current of Th5 prevents d.c. latchup. The protection voltage will be the sum of the gate
supply (V BATH ) and the peak gate-cathode voltage (V GK(BO) ). The protection voltage will be increased if there is a long connection between the
gate decoupling capacitor, C1, and the gate terminal. During the initial rise of a fast impulse, the gate current (I G ) is the same as the cathode
current (I K ). Rates of 80 A/ μ s can cause inductive voltages of 0.8 V in 2.5 cm of printed wiring track. To minimize this inductive voltage increase of
SEPTEMBER 2005 - REVISED MAY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
相关PDF资料 |
PDF描述 |
|---|---|
| TISP61089HDMR-S | SURGE PROT THYRIST 155V SLIC |
| TISP61089QDR-S | PROTECTOR PROGRAMMABLE SLIC |
| TISP61089SDR-S | PROTECTOR OVER VOLTAGE |
| TISP6NTP2ADR | SURGE SUPP QUAD PROG SOP |
| TISP6NTP2C-R6-S | SURGE PROTECTOR QUAD PROG 90A |
相关代理商/技术参数 |
参数描述 |
|---|---|
| TISP61089D | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
| TISP61089DR | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
| TISP61089DR-S | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
| TISP61089DS | 制造商:Bourns Inc 功能描述: |
| TISP61089D-S | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。