参数资料
| 型号： | TISP61089BSDR-S |
| 厂商： | Bourns Inc. |
| 文件页数： | 2/20页 |
| 文件大小： | 0K |
| 描述： | PROTECTOR QUAD PROGRAMMABLE |
| 标准包装： | 2,500 |
| 电压 - 击穿： | 64V |
| 电压 - 断路： | 170V |
| 电流 - 峰值脉冲(10 x 1000µs)： | 30A |
| 电流 - 保持 (Ih)： | 150mA |
| 元件数： | 2 |
| 电容： | 100pF |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 包装： | 带卷 (TR) |
TISP61089BSD High Voltage Ringing SLIC Protector
Description (Continued)
The SLIC line driver section is typically powered from 0 V (ground) and a negative voltage in the region of -20 V to -150 V. The protector gate is
connected to this negative supply. This references the protection (clipping) voltage to the negative supply voltage. The protection voltage will
then track the negative supply voltage and the overvoltage stress on the SLIC is minimized.
Positive overvoltages are clipped to ground by diode forward conduction. Negative overvoltages are initially clipped close to the SLIC negative
supply rail value. If sufficient current is available from the overvoltage, then the protector SCR will switch into a low voltage on-state condition.
As the overvoltage subsides the high holding current of TISP61089BSD SCR helps prevent d.c. latchup.
The TISP61089BSD is intended to be used with a series combination of a 40 ? or higher resistance and a suitable overcurrent protector.
Power fault compliance requires the series overcurrent element to open-circuit or become high impedance (see Applications Information). For
equipment compliant to ITU-T recommendations K.20 or K.21 or K.45 only, the series resistor value is set by the coordination requirements. For
coordination with a 400 V limit GDT, a minimum series resistor value of 10 ? is recommended.
These monolithic protection devices are fabricated in ion-implanted planar vertical power structures for high reliability and in normal system
operation they are virtually transparent. The TISP61089BSD buffered gate design reduces the loading on the SLIC supply during overvoltages
caused by power cross and induction. The TISP61089BSD is available in 8-pin plastic small-outline surface mount package.
Absolute Maximum Ratings, -40 ° C ≤ T J ≤ 85 °C (Unless Otherwise Noted)
Rating
Repetitive peak off-state voltage, V GK = 0
Repetitive peak gate-cathode voltage, V KA = 0
Symbol
V DRM
V GKRM
Value
-170
-167
Unit
V
V
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
10/1000 μ s (Telcordia GR-1089-CORE, Issue 3, October 2002, Section 4)
5/320 μ s (ITU-T K.20, K.21& K.45, K.44 open-circuit voltage wave shape 10/700 μ s)
30
40
10/360 μ s (Telcordia GR-1089-CORE, Issue 3, October 2002, Section 4)
1.2/50 μ s (Telcordia GR-1089-CORE, Issue 3, October 2002, Section 4)
2/10 μ s (Telcordia GR-1089-CORE, Issue 3, October 2002, Section 4)
T J = 25 ° C
I TSP
40
100
120
170
A
Non-repetitive peak on-state current, 60 Hz (see Notes 1, 2 and 3)
0.5 s
1s
6.5
4.6
2s
5s
30 s
900 s
Non-repetitive peak gate current,1/2 μ s pulse, cathodes commoned (see Notes 1 and 2)
Operating free-air temperature range
Junction temperature
Storage temperature range
I TSM
I GSM
T A
T J
T stg
3.4
2.3
1.3
0.73
+40
-40 to +85
-40 to +150
-40 to +150
A
A
° C
°C
° C
NOTES: 1. Initially the protector must be in thermal equilibrium with -40 ° C ≤ T J ≤ 85 ° C. The surge may be repeated after the device returns
to its initial conditions.
2. The rated current values may be applied either to the Ring to Ground or to the Tip to Ground terminal pairs. Additionally, both
terminal pairs may have their rated current values applied simultaneously (in this case the Ground terminal current will be twice
the rated current value of an individual terminal pair). Above 85 ° C, derate linearly to zero at 150 ° C lead temperature.
3. Values for V GG = -100 V. For values at other voltages see Figure 2.
SEPTEMBER 2005 - REVISED MAY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
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相关代理商/技术参数 |
参数描述 |
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| TISP61089D | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
| TISP61089DR | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
| TISP61089DR-S | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
| TISP61089DS | 制造商:Bourns Inc 功能描述: |
| TISP61089D-S | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
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