参数资料
型号: TMP86CH47IUG
厂商: Toshiba Corporation
英文描述: Zener Diode; Application: General; Pd (mW): 500; Vz (V): 17.5 to 18.3; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: DO-35
中文描述: 8位微控制器
文件页数: 62/160页
文件大小: 1627K
代理商: TMP86CH47IUG
Page 54
6. Time Base Timer (TBT)
6.1 Time Base Timer
TMP86CH47IUG
Note 2: The interrupt frequency (TBTCK) must be selected with the time base timer disabled (TBTEN="0"). (The interrupt fre-
quency must not be changed with the disable from the enable state.) Both frequency selection and enabling can be per-
formed simultaneously.
6.1.3
Function
An INTTBT ( Time Base Timer Interrupt ) is generated on the first falling edge of source clock ( The divider
output of the timing generator which is selected by TBTCK. ) after time base timer has been enabled.
The divider is not cleared by the program; therefore, only the first interrupt may be generated ahead of the set
interrupt period ( Figure 6-2 ).
Figure 6-2 Time Base Timer Interrupt
Example :Set the time base timer frequency to fc/2
16
[Hz] and enable an INTTBT interrupt.
LD
(TBTCR) , 00000010B
; TBTCK
010
LD
(TBTCR) , 00001010B
; TBTEN
1
DI
; IMF
0
SET
(EIRL) . 6
Table 6-1 Time Base Timer Interrupt Frequency ( Example : fc = 16.0 MHz, fs = 32.768 kHz )
TBTCK
Time Base Timer Interrupt Frequency [Hz]
NORMAL1/2, IDLE1/2 Mode
NORMAL1/2, IDLE1/2 Mode
SLOW1/2, SLEEP1/2 Mode
DV7CK = 0
DV7CK = 1
000
1.91
1
1
001
7.63
4
4
010
244.14
128
011
976.56
512
100
1953.13
1024
101
3906.25
2048
110
7812.5
4096
111
31250
16384
Source clock
Enable TBT
Interrupt period
TBTCR<TBTEN>
INTTBT
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TMP86CH47SUG Zener Diode; Application: General; Pd (mW): 500; Vz (V): 18.1 to 19.0; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): &#160; ESD (kV) min: -; Package: DO-35
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TMP86CK74AFG Zener Diode; Application: General; Pd (mW): 500; Vz (V): 20.2 to 21.1; Condition Iz at Vz (mA): 2; C (pF) max: -; Condition VR at C (V): &#160; ESD (kV) min: -; Package: DO-35
TMP86CM23AUG Zener Diode; Application: General; Pd (mW): 500; Vz (V): 20.9 to 21.9; Condition Iz at Vz (mA): 2; C (pF) max: -; Condition VR at C (V): &#160; ESD (kV) min: -; Package: DO-35
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