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参数资料
| 型号： | TMS470R1VF346BPZQ |
| 厂商： | TEXAS INSTRUMENTS INC |
| 元件分类： | 微控制器/微处理器 |
| 英文描述： | 32-BIT, FLASH, 48 MHz, RISC MICROCONTROLLER, PQFP100 |
| 封装： | PLASTIC, LQFP-100 |
| 文件页数： | 5/56页 |
| 文件大小： | 779K |
| 代理商： | TMS470R1VF346BPZQ |
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TMS470R1VF336A, TMS470R1VF346A
16/32-BIT RISC FLASH MICROCONTROLLERS
SPNS079I – OCTOBER 2002 – REVISED SEPTEMBER 2006
13
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251-1443
memory selects
Memory selects allow the user to address memory arrays (i.e., flash, RAM, and HET RAM) at user-defined
addresses. Each memory select has its own set (low and high) of memory base address registers (MFBAHRx
and MFBALRx) that, together, define the array’s starting (base) address, block size, and protection.
The base address of each memory select is configurable to any memory address boundary that is a multiple
of the decoded block size. For more information on how to control and configure these memory select registers,
see the bus structure and memory sections of the TMS470R1x System Module Reference Guide (literature
number SPNU189).
For the memory selection assignments and the memory selected, see Table 2.
Table 2. Memory Selection Assignment
The starting addresses for both RAM memory-select signals cannot be offset from each other by a multiple of the user-defined block size in the
memory-base address register.
RAM
The VF3x6A device contains 8K bytes of internal static RAM configurable by the SYS module to be addressed
within the range of 0x0000_0000 to 0xFFE0_0000. This VF3x6A RAM is implemented in one 8K array selected
by two memory-select signals. This VF3x6A configuration imposes an additional constraint on the memory map
for RAM; the starting addresses for both RAM memory selects cannot be offset from each other by the multiples
of the size of the physical RAM (i.e., 8K for the VF3x6A device). The VF3x6A RAM is addressed through
memory selects 2 and 3.
The RAM can be protected by the memory protection unit (MPU) portion of the SYS module, allowing the user
finer blocks of memory protection than is allowed by the memory selects. The MPU is ideal for protecting an
operating system while allowing access to the current task. For more detailed information on the MPU portion
of the SYS module and memory protection, see the memory section of the TMS470R1x System Module
Reference Guide (literature number SPNU189).
F05 flash
The F05 flash memory is a nonvolatile electrically erasable and programmable memory implemented with a
32-bit-wide data bus interface. The F05 flash has an external state machine for programming and erase
functions. See the Flash read and Flash program and erase sections below.
flash protection keys
The VF3x6A devices provide flash protection keys. These four 32-bit protection keys prevent program/erase/
compaction operations from occurring until after the four protection keys have been matched by the CPU loading
the correct user keys into the FMPKEY control register. The protection keys on both VF336A and VF346A are
located in the last 4 words of the first 8K sector. For more detailed information on the flash protection keys and
the FMPKEY control register, see the Optional Quadruple Protection Keys and Programming the Protection
Keys portions of the TMS470R1x F05 Flash Reference Guide (literature number SPNU213).
flash read
The VF3x6A flash memory is configurable by the SYS module to be addressed within the range of 0x0000_0000
to 0xFFE0_0000. The flash is addressed through memory selects 0 and 1.
MEMORY
SELECT
MEMORY SELECTED
(ALL INTERNAL)
MEMORY
SIZE
MPU
MEMORY BASE ADDRESS REGISTER
STATIC MEM
CTL REGISTER
0 (fine)
FLASH
128K
NO
MFBAHR0 and MFBALR0
1 (fine)
FLASH
NO
MFBAHR1 and MFBALR1
2 (fine)
RAM
8K
YES
MFBAHR2 and MFBALR2
3 (fine)
RAM
YES
MFBAHR3 and MFBALR3
4 (fine)
HET RAM
1K
MFBAHR4 and MFBALR4
SMCR1
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相关代理商/技术参数 |
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