参数资料
型号: V58C2128404SBLT6I
厂商: PROMOS TECHNOLOGIES INC
元件分类: DRAM
英文描述: 32M X 4 DDR DRAM, 0.7 ns, PDSO66
封装: 0.400 X 0.875 INCH, PLASTIC, MS-024FC, TSOP2-66
文件页数: 22/60页
文件大小: 915K
代理商: V58C2128404SBLT6I
29
ProMOS TECHNOLOGIES
V58C2128(804/404/164)SB*I
V58C2128(804/404/164)SB*I Rev. 1.3 March 2006
TRUTH TABLE 3 – Current State Bank n - Command to Bank n
(Notes: 1-6; notes appear below and on next page)
NOTE:
1. This table applies when CKEn-1 was HIGH and CKEn is HIGH (see Truth Table 2) and after
tXSR
has been met (if the previous state was self refresh).
2. This table is bank-specific, except where noted, i.e., the current state is for a specific bank and the commands shown
are those allowed to be issued to that bank when in that state. Exceptions are covered in the notes below.
3. Current state definitions:
Idle: The bank has been precharged, and tRP has been met.
Row Active: A row in the bank has been activated, and tRCD has been met.
No data bursts/accesses and no register accesses are in progress.
Read: A READ burst has been initiated, with AUTO PRECHARGE disabled,
and has not yet terminated or been terminated.
Write: A WRITE burst has been initiated, with AUTO PRECHARGE disabled,
and has not yet terminated or been terminated.
4. The following states must not be interrupted by a command issued to the same bank. DESELECT or NOP commands
or allowable commands to the other bank should be issued on any clock edge occurring during these states.
Allowable commands to the other bank are determined by its current state and Truth Table 3, and according to
Truth Table 4.
Precharging: Starts with registration of a PRECHARGE command and ends when tRP is
met. Once tRP is met, the bank will be in the idle state.
CURRENT STATE
/CS
/RAS
/CAS
/WE
COMMAND/ACTION
NOTES
Any
H
X
DESELECT (NOP/continue previous operation)
L
H
NO OPERATION (NOP/continue previous operation)
Idle
L
H
ACTIVE (select and activate row)
L
H
AUTO REFRESH
7
L
MODE REGISTER SET
7
Row Active
L
H
L
H
READ (select column and start READ burst)
10
L
H
L
WRITE (select column and start WRITE burst)
10
L
H
L
PRECHARGE (deactivate row in bank or banks)
8
Read (Auto Precharge
Disabled)
L
H
L
H
READ (select column and start new READ burst)
10
L
H
L
PRECHARGE (truncate READ burst, start PRECHARGE)
8
L
H
L
BURST TERMINATE
9
Write (Auto Precharge
Disabled)
L
H
L
H
READ (select column and start READ burst)
10, 11
L
H
L
WRITE (select column and start new WRITE burst)
10
L
H
L
PRECHARGE (truncate WRITE burst, start PRECHARGE)
8, 11
相关PDF资料
PDF描述
V58C365164S5 4M X 16 DDR DRAM, 0.1 ns, PDSO66
V608ME06 VCO, 1900 MHz - 2270 MHz
V603ME07 VCO, 1896 MHz - 1924 MHz
V6049001 VCO, 1600 MHz - 2200 MHz
V610ME04 VCO, 1950 MHz - 2150 MHz
相关代理商/技术参数
参数描述
V58C2128804S 制造商:MOSEL 制造商全称:MOSEL 功能描述:HIGH PERFORMANCE 2.5 VOLT 128 Mbit DDR SDRAM
V58C2256 制造商:MOSEL 制造商全称:MOSEL 功能描述:HIGH PERFORMANCE 2.5 VOLT 256 Mbit DDR SDRAM
V58C2256164S 制造商:MOSEL 制造商全称:MOSEL 功能描述:HIGH PERFORMANCE 2.5 VOLT 256 Mbit DDR SDRAM
V58C2256324SAB30 制造商:Marvell 功能描述:Marvell V58C2256324SAB30
V58C2256324SAB33 制造商:Marvell 功能描述:Marvell V58C2256324SAB33