参数资料
型号: V58C2128404SBLT6I
厂商: PROMOS TECHNOLOGIES INC
元件分类: DRAM
英文描述: 32M X 4 DDR DRAM, 0.7 ns, PDSO66
封装: 0.400 X 0.875 INCH, PLASTIC, MS-024FC, TSOP2-66
文件页数: 26/60页
文件大小: 915K
代理商: V58C2128404SBLT6I
32
V58C2128(804/404/164)SB*I Rev. 1.3 March 2006
ProMOS TECHNOLOGIES
V58C2128(804/404/164)SB*I
NOTE: (continued)
Read with Auto Precharge Enabled: See following text
Write with Auto Precharge Enabled: See following text
3a. The Read with Auto Precharge Enabled or Write with Auto Precharge Enabled states can each be broken
into two parts: the access period and the precharge period. For Read with Auto Precharge, the precharge
period is defined as if the same burst was executed with Auto Precharge disabled and then followed with the
earliest possible PRECHARGE command that still accesses all of the data in the burst. For Write with Auto
Precharge, the precharge period begins when tWR ends, with tWR measured as if Auto Precharge was
disabled. The access period starts with registration of the command and ends where the precharge period
(or tRP) begins.
During the precharge period of the Read with Auto Precharge Enabled or Write with Auto Precharge Enabled
states, ACTIVE, PRECHARGE, READ and WRITE commands to the other bank may be applied; All
other related limitations apply (e.g. contention between READ data and WRITE data must be avoided).
3b. This device supports “concurrent auto precharge”. This feature allows a read with auto precharge enabled, or
a write with auto precharge enabled, to be followed by any command to the other banks, as long as that com-
mand does not interrrupt the read or write data transfer, and all other related limitations apply (e.g. contention
between READ data and WRITE data must be avoided.)
4. AUTO REFRESH and MODE REGISTER SET commands may only be issued when all banks are idle.
5. A BURST TERMINATE command cannot be issued to another bank; it applies to the bank represented by the
current state only.
6. All states and sequences not shown are illegal or reserved.
7. READs or WRITEs listed in the Command/Action column include READs or WRITEs with AUTO PRECHARGE
enabled and READs or WRITEs with AUTO PRECHARGE disabled.
8. Requires appropriate DM masking.
9. A WRITE command may be applied after the completion of data output.
相关PDF资料
PDF描述
V58C365164S5 4M X 16 DDR DRAM, 0.1 ns, PDSO66
V608ME06 VCO, 1900 MHz - 2270 MHz
V603ME07 VCO, 1896 MHz - 1924 MHz
V6049001 VCO, 1600 MHz - 2200 MHz
V610ME04 VCO, 1950 MHz - 2150 MHz
相关代理商/技术参数
参数描述
V58C2128804S 制造商:MOSEL 制造商全称:MOSEL 功能描述:HIGH PERFORMANCE 2.5 VOLT 128 Mbit DDR SDRAM
V58C2256 制造商:MOSEL 制造商全称:MOSEL 功能描述:HIGH PERFORMANCE 2.5 VOLT 256 Mbit DDR SDRAM
V58C2256164S 制造商:MOSEL 制造商全称:MOSEL 功能描述:HIGH PERFORMANCE 2.5 VOLT 256 Mbit DDR SDRAM
V58C2256324SAB30 制造商:Marvell 功能描述:Marvell V58C2256324SAB30
V58C2256324SAB33 制造商:Marvell 功能描述:Marvell V58C2256324SAB33