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| 型号： | V58C2128404SBLT6I |
| 厂商： | PROMOS TECHNOLOGIES INC |
| 元件分类： | DRAM |
| 英文描述： | 32M X 4 DDR DRAM, 0.7 ns, PDSO66 |
| 封装： | 0.400 X 0.875 INCH, PLASTIC, MS-024FC, TSOP2-66 |
| 文件页数： | 36/60页 |
| 文件大小： | 915K |
| 代理商： | V58C2128404SBLT6I |
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41
ProMOS TECHNOLOGIES
V58C2128(804/404/164)SB*I
V58C2128(804/404/164)SB*I Rev. 1.3 March 2006
NOTES: (continued)
33. The clock is allowed up to ±150ps of jitter. Each timing parameter is allowed to vary by the same amount.
34. tHP min is the lesser of tCL minimum and tCH minimum actually applied to the device CK and CK/ inputs,
collectively during bank active.
35. READs and WRITEs with auto precharge are not allowed to be issued until tRAS(MIN) can be satisfied prior
to the internal precharge command being issued.
36. Applies to x16 only. First DQS (LDQS or UDQS) to transition to last DQ (DQ0-DQ15) to transition valid.
Initial JEDEC specifications suggested this to be same as tDQSQ.
37. Normal Output Drive Curves:
a) The full variation in driver pull-down current from minimum to maximum process, temperature and voltage
will lie within the outer bounding lines of the V-I curve of Figure A.
b) The variation in driver pull-down current within nominal limits of voltage and temperature is expected, but no
guaranteed, to lie within the inner bounding lines of the V-I curve of Figure A.
c) The full variation in driver pull-up current from minimum to maximum process, temperature and voltage will lie
within the outer bounding lines of the V-I curve of Figure B.
d)The variation in driver pull-up current within nominal limits of voltage and temperature is expected, but not
guaranteed, to lie within the inner bounding lines of the V-I curve of Figure B.
e) The full variation in the ratio of the maximum to minimum pull-up and pull-down current should be
between .71 and 1.4, for device drain-to-source voltages from 0.1V to 1.0 Volt, and at the same voltage
and temperature.
f) The full variation in the ratio of the nominal pull-up to pull-down current should be unity ±10%, for device
drain-to-source voltages from 0.1V to 1.0 Volt.
38. Reduced Output Drive Curves:
a) The full variation in driver pull-down current from minimum to maximum process, temperature and voltage
will lie within the outer bounding lines of the V-I curve of Figure C.
b) The variation in driver pull-down current within nominal limits of voltage and temperature is expected, but not
guaranteed, to lie within the inner bounding lines of the V-I curve of Figure C.
c) The full variation in driver pull-up current from minimum to maximum process, temperature and voltage will lie
within the outer bounding lines of the V-I curve of Figure D.
d)The variation in driver pull-up current within nominal limits of voltage and temperature is expected, but not
guaranteed, to lie within the inner bounding lines of the V-I curve of Figure D.
e) The full variation in the ratio of the maximum to minimum pull-up and pull-down current should be between
.71 and 1.4, for device drain-to-source voltages from 0.1V to 1.0 V, and at the same voltage.
f) The full variation in the ratio of the nominal pull-up to pull-down current should be unity ±10%, for device
drain-to-source voltages from 0.1V to 1.0 V.
39. The voltage levels used are derived from the referenced test load. In practice, the voltage levels obtained from
a properly terminated bus will provide significantly different voltage values.
40. VIH overshoot: VIH(MAX) = VDDQ+1.5V for a pulse width 3ns and the pulse width can not be greater than 1/3
of the cycle rate. VIL undershoot: VIL(MIN) = -1.5V for a pulse width 3ns and the pulse width can not be greater than
1/3 of the cycle rate.
41. VDD and VDDQ must track each other.
42. Note 42 is not used.
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