参数资料
型号: V58C2256404SHUR5
厂商: PROMOS TECHNOLOGIES INC
元件分类: DRAM
英文描述: 64M X 4 DDR DRAM, PBGA60
封装: ROHS COMPLIANT, MO-233, FBGA-60
文件页数: 58/60页
文件大小: 1125K
代理商: V58C2256404SHUR5
7
ProMOS TECHNOLOGIES
V58C2256(804/404/164)SH
V58C2256(804/404/164)SH Rev. 1.1 July 2010
Block Diagram
Row decoder
Memory array
Bank 0
8192 x 256
x32 bit
Colu
mn
decoder
Se
nse
am
plif
ier
&
I(
O)
bus
Row decoder
Memory array
Bank 1
C
olumn
decod
er
S
ense
amplif
ier
&
I
(O)
b
u
s
Row decoder
Memory array
Bank 2
Column
de
co
der
Se
nse
am
plif
ier
&
I(
O)
bus
Row decoder
Memory array
Bank 3
Colu
mn
decoder
Sense
amp
lifi
e
r&
I(O
)bus
Input buffer
Output buffer
DQ0-DQ15
Column address
counter
Column address
buffer
Row address
buffer
Refresh Counter
A0 - A12, BA0, BA1
A0 - A8, AP, BA0, BA1
Control logic & timing generator
CK
CKE
CS
RA
S
CAS
WE
DM
Row Addresses
Column Addresses
DLL
Strobe
Gen.
Data Strobe
CK, CK
CK
DQS
8192 x 256
x 32 bit
8192 x 256
x 32 bit
8192 x 256
x 32 bit
16M x 16
Capacitance*
VCC = 2.5V ± 0.2V, f = 1 MHz
*Note: Capacitance is sampled and not 100% tested.
Absolute Maximum Ratings*
Operating temperature range ......... 0 to 70 °C for normal
-40 to 85 °C for Industrial
Storage temperature range......................... -55 to 150 °C
VDDSupply Voltage Relative to VSS..............-1V to +3.6V
VDDQ Supply Voltage Relative to VSS
...............................................................-1V to +3.6V
VREF and Inputs Voltage Relative to VSS
...............................................................-1V to +3.6V
I/O Pins Voltage Relative to VSS
...................................................-0.5V to VDDQ+0.5V
Power dissipation.................................................... 1.6 W
Data out current (short circuit) ............................... 50 mA
*Note: Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage of the device.
Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
Input Capacitance
Symbol
Min Max Unit
BA0, BA1, CKE, CS, RAS, (CAS,
A0-A11, WE)
CINI
23.0
pF
Input Capacitance (CK, CK)CIN2
23.0
pF
Data & DQS I/O Capacitance
COUT
45
pF
Input Capacitance (DM)
CIN3
45.0
pF
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