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参数资料
| 型号： | W19B320ATT9G |
| 厂商： | WINBOND ELECTRONICS CORP |
| 元件分类： | PROM |
| 英文描述： | 2M X 16 FLASH 3V PROM, 70 ns, PDSO48 |
| 封装： | 12 X 20 MM, TSOP-48 |
| 文件页数： | 31/53页 |
| 文件大小： | 479K |
| 代理商： | W19B320ATT9G |
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W19B320AT/B
Publication Release Date: December 27, 2005
- 37 -
Revision A4
8.3 DC Characteristics
8.3.1
CMOS Compatible
LIMITS
PARAMETER
SYM.
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Input Load Current
ILI
VIN =VSS to VDD, VDD = VDD (Max.)
-
±1.0
μA
A9 Input Load Current
ILIT
VDD = VDD (Max.), A9 = 12.5V
-
35
μA
Output Leakage Current
ILO
VOUT =VSS to VDD, VDD =VDD (Max.)
-
±1.0
μA
5 MHz
-
10
16
mA
#CE = VIL, #OE = VIH
Byte Mode
1 MHz
2
4
mA
5 MHz
10
16
mA
VDD Active Read Current
(Note 1, 2)
ICC1
#CE = VIL, #OE = VIH
Word Mode
1 MHz
2
4
mA
VDD Active Write Current
(Note 2, 3)
ICC2
#CE = VIL, #OE = VIH, #WE = VIL
-
15
30
mA
VDD Standby Current (Note2)
ICC3
#CE = VDD ±0.3V, #RESET = VDD
±0.3V
-
0.2
5
μA
VDD Reset Current (Note2)
ICC4
#RESET = VSS ±0.3V
-
0.2
5
μA
Automatic Sleep Mode
Current (note 2, 4)
ICC5
VIH = VDD
±0.3V, VIL = VSS ±0.3V
-
0.2
5
μA
Byte
-
21
45
VDD
Active Read-While-
Program Current (note 1, 2)
ICC6
#CE = VIL, #OE = VIH
Word
-
21
45
mA
Byte
-
21
45
VDD
Active Read-While-
Erase Current (note 1, 2)
ICC7
#CE = VIL, #OE = VIH
Word
-
21
45
mA
VDD
Active Program-While-
Erase-Suspended Current
(note 2, 5)
ICC8
#CE = VIL, #OE = VIH
-
17
35
mA
ACC Pin
5
10
mA
ACC Accelerated Program
Current, Word or Byte
IAcc
#CE = VIL, #OE = VIH
VDD Pin
15
30
mA
Input Low Voltage
VIL
-
-0.5
-
0.8
V
Input High Voltage
VIH
-
0.7x VDD
-
VDD +0.3
V
Voltage for #WP/ACC Sector
Protect/ Unprotect and
Program Acceleration
VHH
VDD =3.0V
±10%
8.5
-
9.5
V
Voltage for AUTOSELECT
and Temporary Sector
Unprotected
VID
VDD =3.0V
±10%
8.5
-
12.5
V
Output Low Voltage
VOL
IOL = 4.0 mA, VDD = VDD (Min.)
-
0.45
V
VOH1
IOH = -2.0 mA, VDD = VDD (Min.)
0.85 VDD
-
V
Output High Voltage
VOH2
IOH = -100
μA, VDD = VDD (Min.)
VDD -0.4
-
Low VDD Lock-Out Voltage
VLKO
2.3
-
2.5
V
Notes:
1. The ICC current listed is typically less than 2 mA/ MHz, with #OE at VIH.
2. Maximum ICC specifications are tested with VDD = VDD max.
3. ICC active while Embedded Erase or Embedded Program is in progress.
4. Automatic sleep mode enables the low power mode when addresses remain stable for tACC + 30 ns. Typical sleep mode
current is200 nA.
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相关代理商/技术参数 |
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|---|---|
| W19B320B | 制造商:WINBOND 制造商全称:Winbond 功能描述:32Mbit, 2.7~3.6-volt single bank CMOS flash memory |
| W19B320BB | 制造商:WINBOND 制造商全称:Winbond 功能描述:32Mbit, 2.7~3.6-volt single bank CMOS flash memory |
| W19B320BB-H | 制造商:WINBOND 制造商全称:Winbond 功能描述:2.7~3.6-volt write (program and erase) operations |
| W19B320BB-M | 制造商:WINBOND 制造商全称:Winbond 功能描述:2.7~3.6-volt write (program and erase) operations |
| W19B320BT | 制造商:WINBOND 制造商全称:Winbond 功能描述:32Mbit, 2.7~3.6-volt single bank CMOS flash memory |
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