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参数资料
| 型号： | W19B320ATT9G |
| 厂商： | WINBOND ELECTRONICS CORP |
| 元件分类： | PROM |
| 英文描述： | 2M X 16 FLASH 3V PROM, 70 ns, PDSO48 |
| 封装： | 12 X 20 MM, TSOP-48 |
| 文件页数： | 4/53页 |
| 文件大小： | 479K |
| 代理商： | W19B320ATT9G |
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W19B320AT/B
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6.2 Command Definitions
The device operation can be initiated by writing specific address and data commands or sequences
into the command register. The device will be reset to reading array data when writing incorrect
address and data values or writing them in the improper sequence.
The addresses will be latched on the falling edge of #WE or #CE, whichever happens later; while the
data will be latched on the rising edge of #WE or #CE, whichever happens first. Please refer to timing
waveforms.
6.2.1
Reading Array Data
After device power-up, it is automatically set to reading array data. There is no commands are
required to retrieve data. After completing an Embedded Program or Embedded Erase algorithm,
each bank is ready to read array data.
After the device accepts an Erase Suspend command, the corresponding bank enters the erase-
suspend-read mode. After it the system can read data from any non-erase-suspended sector within
the same bank. And then, after completing a programming operation in the Erase Suspend mode, the
system may once again read array data with the same exception. Please refer to Erase
Suspend/Erase Resume Commands section for detail information.
The system must initiate the reset command to return a bank to read (or erase-suspend-read) mode if
DQ5 goes high during an active program or erase operation, or the bank is in the AUTOSELECT
mode. See Reset Command section and Requirements for Reading Array Data in the Device Bus
Operations section for more information.
6.2.2
Reset Command
The banks will be to the read or erase-suspend-read mode when writing the reset command. For this
command, the address bits are Don’t Care.
The reset command may be written between the sequential cycles in an erase command sequence
before erasing begins. This resets the bank to which the system was writing to the read mode. Once
erasure begins, however, the device ignores reset commands until the operation is complete.
The reset command may be written between the sequence cycles in a program command sequence
before programming begins. This resets the bank, to which the system was writing to the read mode.
If the program command sequence is written to a bank, in the Erase Suspend mode, writing the reset
command returns that bank to the erase-suspend-read mode. When programming begins, the device
ignores reset commands until the operation is complete.
The reset command may be written between the sequence cycles in an AUTOSELECT command
sequence. When in the AUTOSELECT mode, the reset command must be written to return to the read
mode. If a bank entered into the AUTOSELECT mode while in the Erase Suspend mode, writing the
reset command returns that bank to the erase-suspend-read mode.
If DQ5 goes high during a program or erase operation, writing the reset command returns the banks to
the read mode (or erase-suspend-read mode if that bank was in Erase Suspend).
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相关代理商/技术参数 |
参数描述 |
|---|---|
| W19B320B | 制造商:WINBOND 制造商全称:Winbond 功能描述:32Mbit, 2.7~3.6-volt single bank CMOS flash memory |
| W19B320BB | 制造商:WINBOND 制造商全称:Winbond 功能描述:32Mbit, 2.7~3.6-volt single bank CMOS flash memory |
| W19B320BB-H | 制造商:WINBOND 制造商全称:Winbond 功能描述:2.7~3.6-volt write (program and erase) operations |
| W19B320BB-M | 制造商:WINBOND 制造商全称:Winbond 功能描述:2.7~3.6-volt write (program and erase) operations |
| W19B320BT | 制造商:WINBOND 制造商全称:Winbond 功能描述:32Mbit, 2.7~3.6-volt single bank CMOS flash memory |
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