参数资料
型号: W25Q32DWZPIG
厂商: WINBOND ELECTRONICS CORP
元件分类: PROM
英文描述: 256K X 16 SPI BUS SERIAL EEPROM, 7.5 ns, PDSO8
封装: 6 X 5 MM, GREEN, WSON-8
文件页数: 48/82页
文件大小: 1155K
代理商: W25Q32DWZPIG
W25Q32DW
- 52 -
10.2.28 Power-down (B9h)
Although the standby current during normal operation is relatively low, standby current can be further
reduced with the Power-down instruction. The lower power consumption makes the Power-down
instruction especially useful for battery powered applications (See ICC1 and ICC2 in AC Characteristics).
The instruction is initiated by driving the /CS pin low and shifting the instruction code “B9h” as shown in
Figure 27a & 27b.
The /CS pin must be driven high after the eighth bit has been latched. If this is not done the Power-down
instruction will not be executed. After /CS is driven high, the power-down state will entered within the time
duration of tDP (See AC Characteristics). While in the power-down state only the Release from Power-
down / Device ID instruction, which restores the device to normal operation, will be recognized. All other
instructions are ignored. This includes the Read Status Register instruction, which is always available
during normal operation. Ignoring all but one instruction makes the Power Down state a useful condition
for securing maximum write protection. The device always powers-up in the normal operation with the
standby current of ICC1.
/CS
CLK
DI
(IO
0)
Mode 0
Mode 3
0
1
2
3
4
5
6
7
Instruction (B9h)
Mode 0
Mode 3
tDP
Power-down current
Stand-by current
Figure 27a. Deep Power-down Instruction (SPI Mode)
/CS
CLK
Mode 0
Mode 3
0
1
IO
0
IO
1
IO
2
IO
3
B9h
Instruction
Mode 0
Mode 3
tDP
Power-down current
Stand-by current
Figure 27b. Deep Power-down Instruction (QPI Mode)
相关PDF资料
PDF描述
WF128K32N-150H1M 512K X 8 FLASH 12V PROM MODULE, 150 ns, CHIP66
WF128K32-200G4C 512K X 8 FLASH 12V PROM MODULE, 200 ns, CQFP68
WF128K16-120CC5 128K X 16 FLASH 5V PROM MODULE, 120 ns, DMA40
WMF2M8-150DLI5A 2M X 8 FLASH 5V PROM, 150 ns, CDSO44
WS57C45-25T 2K X 8 UVPROM, 25 ns, CDIP24
相关代理商/技术参数
参数描述
W25Q32DWZPIG TR 制造商:Winbond Electronics Corp 功能描述:IC FLASH 32MBIT 104MHZ 8WSON
W25Q32DWZPIP 制造商:WINBOND 制造商全称:Winbond 功能描述:1.8V 32M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI & QPI
W25Q32FVSFIG 功能描述:IC FLASH SPI 32MBIT 16SOIC RoHS:是 类别:集成电路 (IC) >> 存储器 系列:SpiFlash® 标准包装:72 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 存储容量:4.5M(256K x 18) 速度:133MHz 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:0°C ~ 70°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP(14x20) 包装:托盘
W25Q32FVSSIG 制造商:Winbond Electronics Corp 功能描述:Flash Serial-SPI 3V/3.3V 32Mbit 4M x 8bit 8.5ns 8-Pin SOIC 制造商:Winbond Electronics Corp 功能描述:32MB F VERSIOB SPI FLASH 制造商:Winbond Electronics Corp 功能描述:IC FLASH 32MBIT 104MHZ 8SOIC
W25Q32FVSSIG TR 制造商:Winbond Electronics Corp 功能描述:IC FLASH 32MBIT 104MHZ 8SOIC