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参数资料
| 型号： | W25Q80BVSFIG |
| 厂商： | WINBOND ELECTRONICS CORP |
| 元件分类： | PROM |
| 英文描述： | 1M X 8 SPI BUS SERIAL EEPROM, PDSO16 |
| 封装： | 0.300 INCH, GREEN, PLASTIC, SOIC-16 |
| 文件页数： | 39/72页 |
| 文件大小： | 1878K |
| 代理商： | W25Q80BVSFIG |
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W25Q80BV
- 44 -
10.2.26 Chip Erase (C7h / 60h)
The Chip Erase instruction sets all memory within the device to the erased state of all 1s (FFh). A Write
Enable instruction must be executed before the device will accept the Chip Erase Instruction (Status
Register bit WEL must equal 1). The instruction is initiated by driving the /CS pin low and shifting the
instruction code “C7h” or “60h”. The Chip Erase instruction sequence is shown in figure 24.
The /CS pin must be driven high after the eighth bit has been latched. If this is not done the Chip Erase
instruction will not be executed. After /CS is driven high, the self-timed Chip Erase instruction will
commence for a time duration of tCE (See AC Characteristics). While the Chip Erase cycle is in progress,
the Read Status Register instruction may still be accessed to check the status of the BUSY bit. The
BUSY bit is a 1 during the Chip Erase cycle and becomes a 0 when finished and the device is ready to
accept other instructions again. After the Chip Erase cycle has finished the Write Enable Latch (WEL) bit
in the Status Register is cleared to 0. The Chip Erase instruction will not be executed if any page is
protected by the Block Protect (CMP, SEC, TB, BP2, BP1, and BP0) bits (see Status Register Memory
Protection table).
Figure 24. Chip Erase Instruction Sequence Diagram
相关PDF资料 |
PDF描述 |
|---|---|
| W25X32AVZPIG | 4M X 8 FLASH 2.7V PROM, PDSO8 |
| W25X32AVSFIG | 4M X 8 FLASH 2.7V PROM, PDSO16 |
| W26L04AJ-12I | 256K X 16 STANDARD SRAM, 12 ns, PDSO44 |
| W26L04AH-10 | 256K X 16 STANDARD SRAM, 10 ns, PDSO44 |
| W28A | CERPAC, 28 LEAD |
相关代理商/技术参数 |
参数描述 |
|---|---|
| W25Q80BVSNAG | 制造商:WINBOND 制造商全称:Winbond 功能描述:8M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI |
| W25Q80BVSNAP | 制造商:WINBOND 制造商全称:Winbond 功能描述:8M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI |
| W25Q80BVSNIG | 功能描述:IC SPI FLASH 8MBIT 8SOIC RoHS:是 类别:集成电路 (IC) >> 存储器 系列:SpiFlash® 标准包装:2,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 异步 存储容量:256K (32K x 8) 速度:15ns 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:28-TSSOP（0.465"，11.8mm 宽） 供应商设备封装:28-TSOP 包装:带卷 (TR) 其它名称:71V256SA15PZGI8 |
| W25Q80BVSNIG TR | 制造商:Winbond Electronics Corp 功能描述: 制造商:Winbond Electronics Corp 功能描述:IC FLASH 8MBIT 104MHZ 8SOIC |
| W25Q80BVSNIP | 制造商:WINBOND 制造商全称:Winbond 功能描述:8M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI |
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