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参数资料
| 型号： | W25X20-VSNI |
| 厂商： | WINBOND ELECTRONICS CORP |
| 元件分类： | PROM |
| 英文描述： | 2M X 1 FLASH 2.7V PROM, PDSO8 |
| 封装： | 0.150 INCH, PLASTIC, SOIC-8 |
| 文件页数： | 10/42页 |
| 文件大小： | 1198K |
| 代理商： | W25X20-VSNI |
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W25X10, W25X20, W25X40 AND W25X80
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9.2.6
Write Status Register (01h)
The Write Status Register instruction allows the Status Register to be written. A Write Enable
instruction must previously have been executed for the device to accept the Write Status Register
Instruction (Status Register bit WEL must equal 1). Once write enabled, the instruction is entered by
driving /CS low, sending the instruction code “01h”, and then writing the status register data byte as
illustrated in figure 7. The Status Register bits are shown in figure 3 and described earlier in this data
sheet.
Only non-volatile Status Register bits SRP, TB, BP2, BP1 and BP0 (bits 7, 5, 4, 3 and 2) can be
written to. All other Status Register bit locations are read-only and will not be affected by the Write
Status Register instruction.
The /CS pin must be driven high after the eighth bit of the last byte has been latched. If this is not
done the Write Status Register instruction will not be executed. After /CS is driven high, the self-timed
Write Status Register cycle will commence for a time duration of tW (See AC Characteristics). While
the Write Status Register cycle is in progress, the Read Status Register instruction may still accessed
to check the status of the BUSY bit. The BUSY bit is a 1 during the Write Status Register cycle and a
0 when the cycle is finished and ready to accept other instructions again. After the Write Register
cycle has finished the Write Enable Latch (WEL) bit in the Status Register will be cleared to 0.
The Write Status Register instruction allows the Block Protect bits (TB, BP2, BP1 and BP0) to be set
for protecting all, a portion, or none of the memory from erase and program instructions. Protected
areas become read-only (see Status Register Memory Protection table). The Write Status Register
instruction also allows the Status Register Protect bit (SRP) to be set. This bit is used in conjunction
with the Write Protect (/WP) pin to disable writes to the status register. When the SRP bit is set to a 0
state (factory default) the /WP pin has no control over the status register. When the SRP pin is set to a
1, the Write Status Register instruction is locked out while the /WP pin is low. When the /WP pin is
high the Write Status Register instruction is allowed.
Figure 7. Write Status Register Instruction Sequence Diagram
相关PDF资料 |
PDF描述 |
|---|---|
| WS512K32-100G4Q | 2M X 8 MULTI DEVICE SRAM MODULE, 100 ns, CQFP68 |
| WF8M32-100G4DM5 | 8M X 32 FLASH 5V PROM MODULE, 100 ns, CQFP68 |
| WF8M32-120G4DI5 | 8M X 32 FLASH 5V PROM MODULE, 120 ns, CQFP68 |
| WMS512K8B-15CIEA | 512K X 8 STANDARD SRAM, 15 ns, CDIP32 |
| WMS512K8B-17DEMEA | 512K X 8 STANDARD SRAM, 20 ns, CDSO32 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| W25X20VSNIG | 功能描述:IC FLASH 2MBIT 75MHZ 8SOIC RoHS:是 类别:集成电路 (IC) >> 存储器 系列:SpiFlash® 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:移动 SDRAM 存储容量:256M（8Mx32） 速度:133MHz 接口:并联 电源电压:1.7 V ~ 1.95 V 工作温度:-40°C ~ 85°C 封装/外壳:90-VFBGA 供应商设备封装:90-VFBGA（8x13） 包装:带卷 (TR) 其它名称:557-1327-2 |
| W25X20VSNIG T&R | 制造商:Winbond Electronics Corp 功能描述:IC FLASH 2MBIT 75MHZ 8SOIC |
| W25X20VSNIG T&R | 功能描述:IC FLASH 2MBIT 75MHZ 8SOIC RoHS:是 类别:集成电路 (IC) >> 存储器 系列:SpiFlash® 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:移动 SDRAM 存储容量:256M（8Mx32） 速度:133MHz 接口:并联 电源电压:1.7 V ~ 1.95 V 工作温度:-40°C ~ 85°C 封装/外壳:90-VFBGA 供应商设备封装:90-VFBGA（8x13） 包装:带卷 (TR) 其它名称:557-1327-2 |
| W25X20VSNIZ | 制造商:WINBOND 制造商全称:Winbond 功能描述:1M-BIT, 2M-BIT, 4M-BIT AND 8M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI |
| W25X20VSSC | 制造商:WINBOND 制造商全称:Winbond 功能描述:1M-BIT, 2M-BIT, 4M-BIT AND 8M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI |
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