- 您现在的位置：买卖IC网 > PDF目录141433 > W25X20-VSNI (WINBOND ELECTRONICS CORP) 2M X 1 FLASH 2.7V PROM, PDSO8 PDF资料下载
参数资料
| 型号： | W25X20-VSNI |
| 厂商： | WINBOND ELECTRONICS CORP |
| 元件分类： | PROM |
| 英文描述： | 2M X 1 FLASH 2.7V PROM, PDSO8 |
| 封装： | 0.150 INCH, PLASTIC, SOIC-8 |
| 文件页数： | 18/42页 |
| 文件大小： | 1198K |
| 代理商： | W25X20-VSNI |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页当前第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页
W25X10, W25X20, W25X40 AND W25X80
Publication Release Date: February 13, 2006
- 25 -
Revision E
9.2.13 Chip Erase (C7h)
The Chip Erase instruction sets all memory within the device to the erased state of all 1s (FFh). A
Write Enable instruction must be executed before the device will accept the Chip Erase Instruction
(Status Register bit WEL must equal 1). The instruction is initiated by driving the /CS pin low and
shifting the instruction code “C7h”. The Chip Erase instruction sequence is shown in figure 14.
The /CS pin must be driven high after the eighth bit has been latched. If this is not done the Chip
Erase instruction will not be executed. After /CS is driven high, the self-timed Chip Erase instruction
will commence for a time duration of tCE (See AC Characteristics). While the Chip Erase cycle is in
progress, the Read Status Register instruction may still be accessed to check the status of the BUSY
bit. The BUSY bit is a 1 during the Chip Erase cycle and becomes a 0 when finished and the device is
ready to accept other instructions again. After the Chip Erase cycle has finished the Write Enable
Latch (WEL) bit in the Status Register is cleared to 0. The Chip Erase instruction will not be executed
if any page is protected by the Block Protect (BP2, BP1, and BP0) bits (see Status Register Memory
Protection table).
Figure 14. Chip Erase Instruction Sequence Diagram
相关PDF资料 |
PDF描述 |
|---|---|
| WS512K32-100G4Q | 2M X 8 MULTI DEVICE SRAM MODULE, 100 ns, CQFP68 |
| WF8M32-100G4DM5 | 8M X 32 FLASH 5V PROM MODULE, 100 ns, CQFP68 |
| WF8M32-120G4DI5 | 8M X 32 FLASH 5V PROM MODULE, 120 ns, CQFP68 |
| WMS512K8B-15CIEA | 512K X 8 STANDARD SRAM, 15 ns, CDIP32 |
| WMS512K8B-17DEMEA | 512K X 8 STANDARD SRAM, 20 ns, CDSO32 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| W25X20VSNIG | 功能描述:IC FLASH 2MBIT 75MHZ 8SOIC RoHS:是 类别:集成电路 (IC) >> 存储器 系列:SpiFlash® 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:移动 SDRAM 存储容量:256M（8Mx32） 速度:133MHz 接口:并联 电源电压:1.7 V ~ 1.95 V 工作温度:-40°C ~ 85°C 封装/外壳:90-VFBGA 供应商设备封装:90-VFBGA（8x13） 包装:带卷 (TR) 其它名称:557-1327-2 |
| W25X20VSNIG T&R | 制造商:Winbond Electronics Corp 功能描述:IC FLASH 2MBIT 75MHZ 8SOIC |
| W25X20VSNIG T&R | 功能描述:IC FLASH 2MBIT 75MHZ 8SOIC RoHS:是 类别:集成电路 (IC) >> 存储器 系列:SpiFlash® 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:移动 SDRAM 存储容量:256M（8Mx32） 速度:133MHz 接口:并联 电源电压:1.7 V ~ 1.95 V 工作温度:-40°C ~ 85°C 封装/外壳:90-VFBGA 供应商设备封装:90-VFBGA（8x13） 包装:带卷 (TR) 其它名称:557-1327-2 |
| W25X20VSNIZ | 制造商:WINBOND 制造商全称:Winbond 功能描述:1M-BIT, 2M-BIT, 4M-BIT AND 8M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI |
| W25X20VSSC | 制造商:WINBOND 制造商全称:Winbond 功能描述:1M-BIT, 2M-BIT, 4M-BIT AND 8M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI |
发布紧急采购，3分钟左右您将得到回复。