参数资料
型号: W25X20-VSNI
厂商: WINBOND ELECTRONICS CORP
元件分类: PROM
英文描述: 2M X 1 FLASH 2.7V PROM, PDSO8
封装: 0.150 INCH, PLASTIC, SOIC-8
文件页数: 14/42页
文件大小: 1198K
代理商: W25X20-VSNI
W25X10, W25X20, W25X40 AND W25X80
Publication Release Date: February 13, 2006
- 21 -
Revision E
9.2.9
Fast Read Dual Output (3Bh)
The Fast Read Dual Output (3Bh) instruction is similar to the standard Fast Read (0Bh) instruction
except that data is output on two pins, DO and DIO, instead of just DO. This allows data to be
transferred from the W25X10/20/40/80 at twice the rate of standard SPI devices. The Fast Read Dual
Output instruction is ideal for quickly downloading code from Flash to RAM upon power-up or for
applications that cache code-segments to RAM for execution.
Similar to the Fast Read instruction, the Fast Read Dual Output instruction can operate at the highest
possible frequency of FR (see AC Electrical Characteristics). This is accomplished by adding eight
“dummy” clocks after the 24-bit address as shown in figure 10. The dummy clocks allow the device's
internal circuits additional time for setting up the initial address. The input data during the dummy
clocks is “don’t care”. However, the DIO pin should be high-impedance prior to the falling edge of the
first data out clock.
Figure 10. Fast Read Dual Output Instruction Sequence Diagram
相关PDF资料
PDF描述
WS512K32-100G4Q 2M X 8 MULTI DEVICE SRAM MODULE, 100 ns, CQFP68
WF8M32-100G4DM5 8M X 32 FLASH 5V PROM MODULE, 100 ns, CQFP68
WF8M32-120G4DI5 8M X 32 FLASH 5V PROM MODULE, 120 ns, CQFP68
WMS512K8B-15CIEA 512K X 8 STANDARD SRAM, 15 ns, CDIP32
WMS512K8B-17DEMEA 512K X 8 STANDARD SRAM, 20 ns, CDSO32
相关代理商/技术参数
参数描述
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