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参数资料
| 型号： | W25X20-VSNI |
| 厂商： | WINBOND ELECTRONICS CORP |
| 元件分类： | PROM |
| 英文描述： | 2M X 1 FLASH 2.7V PROM, PDSO8 |
| 封装： | 0.150 INCH, PLASTIC, SOIC-8 |
| 文件页数： | 16/42页 |
| 文件大小： | 1198K |
| 代理商： | W25X20-VSNI |
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W25X10, W25X20, W25X40 AND W25X80
Publication Release Date: February 13, 2006
- 23 -
Revision E
9.2.11 Sector Erase (20h)
The Sector Erase instruction sets all memory within a specified sector (4K-bytes) to the erased state
of all 1s (FFh). A Write Enable instruction must be executed before the device will accept the Sector
Erase Instruction (Status Register bit WEL must equal 1). The instruction is initiated by driving the /CS
pin low and shifting the instruction code “20h” followed a 24-bit sector address (A23-A0) (see Figure
2). The Sector Erase instruction sequence is shown in figure 12.
The /CS pin must be driven high after the eighth bit of the last byte has been latched. If this is not
done the Sector Erase instruction will not be executed. After /CS is driven high, the self-timed Sector
Erase instruction will commence for a time duration of tSE (See AC Characteristics). While the Sector
Erase cycle is in progress, the Read Status Register instruction may still be accessed for checking the
status of the BUSY bit. The BUSY bit is a 1 during the Sector Erase cycle and becomes a 0 when the
cycle is finished and the device is ready to accept other instructions again. After the Sector Erase
cycle has finished the Write Enable Latch (WEL) bit in the Status Register is cleared to 0. The Sector
Erase instruction will not be executed if the addressed page is protected by the Block Protect (TB,
BP2, BP1, and BP0) bits (see Status Register Memory Protection table).
Figure 12. Sector Erase Instruction Sequence Diagram
相关PDF资料 |
PDF描述 |
|---|---|
| WS512K32-100G4Q | 2M X 8 MULTI DEVICE SRAM MODULE, 100 ns, CQFP68 |
| WF8M32-100G4DM5 | 8M X 32 FLASH 5V PROM MODULE, 100 ns, CQFP68 |
| WF8M32-120G4DI5 | 8M X 32 FLASH 5V PROM MODULE, 120 ns, CQFP68 |
| WMS512K8B-15CIEA | 512K X 8 STANDARD SRAM, 15 ns, CDIP32 |
| WMS512K8B-17DEMEA | 512K X 8 STANDARD SRAM, 20 ns, CDSO32 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| W25X20VSNIG | 功能描述:IC FLASH 2MBIT 75MHZ 8SOIC RoHS:是 类别:集成电路 (IC) >> 存储器 系列:SpiFlash® 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:移动 SDRAM 存储容量:256M（8Mx32） 速度:133MHz 接口:并联 电源电压:1.7 V ~ 1.95 V 工作温度:-40°C ~ 85°C 封装/外壳:90-VFBGA 供应商设备封装:90-VFBGA（8x13） 包装:带卷 (TR) 其它名称:557-1327-2 |
| W25X20VSNIG T&R | 制造商:Winbond Electronics Corp 功能描述:IC FLASH 2MBIT 75MHZ 8SOIC |
| W25X20VSNIG T&R | 功能描述:IC FLASH 2MBIT 75MHZ 8SOIC RoHS:是 类别:集成电路 (IC) >> 存储器 系列:SpiFlash® 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:移动 SDRAM 存储容量:256M（8Mx32） 速度:133MHz 接口:并联 电源电压:1.7 V ~ 1.95 V 工作温度:-40°C ~ 85°C 封装/外壳:90-VFBGA 供应商设备封装:90-VFBGA（8x13） 包装:带卷 (TR) 其它名称:557-1327-2 |
| W25X20VSNIZ | 制造商:WINBOND 制造商全称:Winbond 功能描述:1M-BIT, 2M-BIT, 4M-BIT AND 8M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI |
| W25X20VSSC | 制造商:WINBOND 制造商全称:Winbond 功能描述:1M-BIT, 2M-BIT, 4M-BIT AND 8M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI |
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