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参数资料
| 型号： | W25X20-VSNI |
| 厂商： | WINBOND ELECTRONICS CORP |
| 元件分类： | PROM |
| 英文描述： | 2M X 1 FLASH 2.7V PROM, PDSO8 |
| 封装： | 0.150 INCH, PLASTIC, SOIC-8 |
| 文件页数： | 19/42页 |
| 文件大小： | 1198K |
| 代理商： | W25X20-VSNI |
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W25X10, W25X20, W25X40 AND W25X80
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9.2.14 Power-down (B9h)
Although the standby current during normal operation is relatively low, standby current can be further
reduced with the Power-down instruction. The lower power consumption makes the Power-down
instruction especially useful for battery powered applications (See ICC1 and ICC2 in AC
Characteristics). The instruction is initiated by driving the /CS pin low and shifting the instruction code
“B9h” as shown in figure 15.
The /CS pin must be driven high after the eighth bit has been latched. If this is not done the Power-
down instruction will not be executed. After /CS is driven high, the power-down state will entered
within the time duration of tDP (See AC Characteristics). While in the power-down state only the
Release from Power-down / Device ID instruction, which restores the device to normal operation, will
be recognized. All other instructions are ignored. This includes the Read Status Register instruction,
which is always available during normal operation. Ignoring all but one instruction makes the Power
Down state a useful condition for securing maximum write protection. The device always powers-up in
the normal operation with the standby current of ICC1.
Figure 15. Deep Power-down Instruction Sequence Diagram
相关PDF资料 |
PDF描述 |
|---|---|
| WS512K32-100G4Q | 2M X 8 MULTI DEVICE SRAM MODULE, 100 ns, CQFP68 |
| WF8M32-100G4DM5 | 8M X 32 FLASH 5V PROM MODULE, 100 ns, CQFP68 |
| WF8M32-120G4DI5 | 8M X 32 FLASH 5V PROM MODULE, 120 ns, CQFP68 |
| WMS512K8B-15CIEA | 512K X 8 STANDARD SRAM, 15 ns, CDIP32 |
| WMS512K8B-17DEMEA | 512K X 8 STANDARD SRAM, 20 ns, CDSO32 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| W25X20VSNIG | 功能描述:IC FLASH 2MBIT 75MHZ 8SOIC RoHS:是 类别:集成电路 (IC) >> 存储器 系列:SpiFlash® 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:移动 SDRAM 存储容量:256M（8Mx32） 速度:133MHz 接口:并联 电源电压:1.7 V ~ 1.95 V 工作温度:-40°C ~ 85°C 封装/外壳:90-VFBGA 供应商设备封装:90-VFBGA（8x13） 包装:带卷 (TR) 其它名称:557-1327-2 |
| W25X20VSNIG T&R | 制造商:Winbond Electronics Corp 功能描述:IC FLASH 2MBIT 75MHZ 8SOIC |
| W25X20VSNIG T&R | 功能描述:IC FLASH 2MBIT 75MHZ 8SOIC RoHS:是 类别:集成电路 (IC) >> 存储器 系列:SpiFlash® 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:移动 SDRAM 存储容量:256M（8Mx32） 速度:133MHz 接口:并联 电源电压:1.7 V ~ 1.95 V 工作温度:-40°C ~ 85°C 封装/外壳:90-VFBGA 供应商设备封装:90-VFBGA（8x13） 包装:带卷 (TR) 其它名称:557-1327-2 |
| W25X20VSNIZ | 制造商:WINBOND 制造商全称:Winbond 功能描述:1M-BIT, 2M-BIT, 4M-BIT AND 8M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI |
| W25X20VSSC | 制造商:WINBOND 制造商全称:Winbond 功能描述:1M-BIT, 2M-BIT, 4M-BIT AND 8M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI |
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