- 您现在的位置：买卖IC网 > PDF目录300103 > W28J800BT90L (WINBOND ELECTRONICS CORP) 512K X 16 FLASH 2.7V PROM, 90 ns, PDSO48 PDF资料下载
参数资料
| 型号： | W28J800BT90L |
| 厂商： | WINBOND ELECTRONICS CORP |
| 元件分类： | PROM |
| 英文描述： | 512K X 16 FLASH 2.7V PROM, 90 ns, PDSO48 |
| 封装： | 12 X 20 MM, TSOP-48 |
| 文件页数： | 26/49页 |
| 文件大小： | 1527K |
| 代理商： | W28J800BT90L |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页当前第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页第44页第45页第46页第47页第48页第49页
W28J800B/T
- 32 -
attempted operation. If #RESET transitions to VIL during block erase, full chip erase, word/byte write or
lock-bit configuration, RY/#BY will remain low until the reset operation is complete. Then, the
operation will abort and the device will enter reset mode. The aborted operation may leave data
partially altered. Therefore, the command sequence must be repeated after normal operation is
restored. Device power-off or #RESET transitions to VIL clear the status register.
The CUI latches commands issued by system software and is not altered by VPP or #CE transitions or
WSM actions. Its state is read array mode upon power-up, after exit from reset mode or after VDD
transitions below VLKO.
Power-up/Down Protection
The device is designed to offer protection against accidental block erase, full chip erase, word/byte
write or lock-bit configuration during power transitions. Upon power-up, the device is indifferent as to
which power supply (VPP or VDD) powers-up first. Internal circuitry resets the CUI to read array mode
at power-up.
A system designer must guard against spurious writes for VDD voltages above VLKO when VPP is
active. Since both #WE and #CE must be low for a command write, driving either to VIH will inhibit
writes. The CUI’s two step command sequence architecture provides added level of protection against
data alteration.
In-system block lock and unlock capability prevents inadvertent data alteration. The device is disabled
while #RESET = VIL regardless of its control inputs state.
Power Dissipation
When designing portable systems, designers must consider battery power consumption not only
during device operation, but also for data retention during system idle time. Flash memory’s non-
volatility increases usable battery life because data is retained when system power is removed.
Data Protection Method
On some systems, noise having a level exceeding the limit dictated in the specification may be
generated under specific operating conditions. Such noise, when induced onto #WE signal or power
supply, may be interpreted as false commands, causing undesired memory updating. To protect the
data stored in the flash memory against undesired overwriting, systems operating with the flash
memory should have the following write protect designs, as appropriate:
1) Protecting data in specific block
When a lock bit is set, the corresponding block (includes the 2 boot blocks) is protected against
overwriting. By setting a #WP low, only the 2 boot blocks can be protected against overwriting. By
using this feature, the flash memory space can be divided into the program section (locked section)
and data section (unlocked section). The permanent lock bit can be used to prevent false block bit
setting. For further information on setting/resetting lock-bit, refer to the specification.
2) Data protection through VPP
When the level of VPP is lower than VPPLK (lockout voltage), write operation on the flash memory is
disabled. All blocks are locked and the data in the blocks are completely write protected. For the
lockout voltage, refer to the specification.
相关PDF资料 |
PDF描述 |
|---|---|
| W28J800BT90C | 512K X 16 FLASH 2.7V PROM, 90 ns, PDSO48 |
| W29EE011-20 | 128K X 8 EEPROM 5V, 200 ns, PDIP32 |
| W39L040P-70Z | 512K X 8 FLASH 3.3V PROM, 70 ns, PQCC32 |
| W39L040T-90Z | 512K X 8 FLASH 3.3V PROM, 90 ns, PDSO32 |
| W39V040AQZ | 512K X 8 FLASH 3.3V PROM, 11 ns, PDSO32 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| W28NK60Z | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:N-CHANNEL 600 V - 0.155з - 27A TO-247 Zener-Protected SuperMESH MOSFET |
| W28-SQ11A-10 | 功能描述:CIRCUIT BREAK 10A W/SWITCH RoHS:否 类别:过电压，电流，温度装置 >> 断路器 系列:W28 标准包装:3 系列:AS168X 断路器类型:热磁动式 电压:65VDC，277/480VAC 电流 - 跳闸(It):30A 极数:3 触动器类型:按片 安装类型:DIN 轨道 其它名称:4420.02104420.0210-ND486-2338AS168X-CB3G300-NDCBE AS168X-CB3G300 |
| W28-SQ11A-15 | 制造商:TE Connectivity 功能描述: |
| W28-SQ11A-3 | 制造商:TE Connectivity 功能描述:Circuit Breaker Thermal 1Pole 3A 250VAC/32VDC |
| W28-SQ11A-5 | 制造商:TE Connectivity 功能描述:Circuit Breaker Thermal 1Pole 5A 250VAC/32VDC |
发布紧急采购，3分钟左右您将得到回复。