参数资料
型号: W28J800BT90L
厂商: WINBOND ELECTRONICS CORP
元件分类: PROM
英文描述: 512K X 16 FLASH 2.7V PROM, 90 ns, PDSO48
封装: 12 X 20 MM, TSOP-48
文件页数: 39/49页
文件大小: 1527K
代理商: W28J800BT90L
W28J800B/T
- 44 -
Reset Operations
RY/#BY(R)
High Z
("1")
V OL
("0")
IH
IL
V
#RESET(P)
PLPH
t
(A)Reset During Read Array Mode
(C)#RESET Rising Timing
2.7V
VIL
IH
IL
V
#RESET(P)
2VPH
t
RY/#BY(R)
High Z
("1")
VOL
("0")
IH
IL
V
#RESET(P)
PLPH
t
(B)Reset During Block Erase, Full Chip Erase, Word/Byte Write or Lock-Bit Configuration
PLRZ
t
VDD
(SR.7)
Figure 20. AC Waveform for Reset Operation
Reset AC Specifications
PARAMETER
SYMBOL
MIN.
MAX.
UNIT
#RESET Pulse Low Time (Note 2)
tPLPH
100
nS
#RESET Low to Reset during Block Erase, Full Chip Erase,
Word/Byte Write or Lock-Bit Configuration (Note 1, 2)
tPLRZ
30
S
VDD 2.7V to #RESET High (Note 2, 3)
t2VPH
100
nS
Notes:
1. If #RESET is asserted while a block erase, full chip erase, word/byte write or lock-bit configuration operation is not executing,
the reset will complete within 100ns.
2. A reset time, tPHQV, is required from the later of RY/#BY(SR.7) going High Z("1") or #RESET going high until outputs are valid.
Refer to AC Characteristics - Read-Only Operations for tPHQV.
3. When the device power-up, holding #RESET low minimum 100ns is required after VDD has been in predefined range and also
has been in stable there.
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