参数资料
型号: W29C040T-90N
厂商: WINBOND ELECTRONICS CORP
元件分类: PROM
英文描述: 512K X 8 FLASH 5V PROM, 90 ns, PDSO32
封装: TSOP1-32
文件页数: 2/28页
文件大小: 257K
代理商: W29C040T-90N
W29C040
- 10 -
Command Codes for Product Identification and Boot Block Lockout Detection
BYTE SEQUENCE
ALTERNATE PRODUCT (7)
IDENTIFICATION/BOOT BLOCK LOCKOUT
DETECTION ENTRY
SOFTWARE PRODUCT
IDENTIFICATION/BOOT BLOCK LOCKOUT
DETECTION EXIT
ADDRESS
DATA
ADDRESS
DATA
0 Write
5555
AA
5555H
AAH
1 Write
2AAA
55
2AAAH
55H
2 Write
5555
90
5555H
F0H
3 Write
-
4 Write
-
5 Write
-
Pause 10
μS
Pause 10
μS
Software Product Identification and Boot Block Lockout Detection Acquisition Flow
Product
Identification
Entry (1)
Load data AA
to
address 5555
Load data 55
to
address 2AAA
Load data 90
to
address 5555
Product
Identification
and Boot Block
Lockout Detection
Mode (3)
Read address = 00000
data = DA
Read address = 00001
data = 46
Read address = 00002
data = FF/FE
(4)
Read address = 7FFF2
data = FF/FE
(5)
Product
Identification
Exit (1)
Load data AA
to
address 5555
Load data 55
to
address 2AAA
Load data F0
to
address 5555
Pause 10 uS
Normal Mode
(6)
(2)
Notes for software product identification/boot block lockout detection:
(1) Data Format: DQ7
DQ0 (Hex); Address Format: A14 A0 (Hex)
(2) A1
A18 = VIL; manufacture code is read for A0 = VIL; device code is read for A0 = VIH.
(3) The device does not remain in identification and boot block (address 0002 Hex/7FFF2 Hex respond to first 16K/last 16K) lockout detection
mode
if power down.
(4), (5) If the output data is "FF Hex," the boot block programming lockout feature is activated; if the output data "FE Hex," the lockout feature is
inactivated and the block can be programmed.
(6) The device returns to standard operation mode.
(7) This product supports both the JEDEC standard 3 bytes command code sequence and original 6 byte command code sequence. For new
designs, Winbond recommends that the 3 bytes command code sequence be used.
相关PDF资料
PDF描述
WED2ZL361MS26BC 1M X 36 ZBT SRAM, 2.6 ns, PBGA119
W3E32M72S-266BC 32M X 72 DDR DRAM, 0.75 ns, PBGA219
W3HG128M72AEF665F1MCG DDR DRAM MODULE, DMA240
WS128K32-100G4QE 512K X 8 MULTI DEVICE SRAM MODULE, 100 ns, CQFP68
WS128K32N-70HME 512K X 8 MULTI DEVICE SRAM MODULE, 70 ns, CHIP66
相关代理商/技术参数
参数描述
W29C101-12 制造商:未知厂家 制造商全称:未知厂家 功能描述:x16 Flash EEPROM
W29C101-12B 制造商:未知厂家 制造商全称:未知厂家 功能描述:x16 Flash EEPROM
W29C101-70 制造商:未知厂家 制造商全称:未知厂家 功能描述:x16 Flash EEPROM
W29C101-70B 制造商:未知厂家 制造商全称:未知厂家 功能描述:x16 Flash EEPROM
W29C101-90 制造商:未知厂家 制造商全称:未知厂家 功能描述:x16 Flash EEPROM