- 您现在的位置：买卖IC网 > PDF目录231502 > W29C040T-90N (WINBOND ELECTRONICS CORP) 512K X 8 FLASH 5V PROM, 90 ns, PDSO32 PDF资料下载
参数资料
| 型号： | W29C040T-90N |
| 厂商： | WINBOND ELECTRONICS CORP |
| 元件分类： | PROM |
| 英文描述： | 512K X 8 FLASH 5V PROM, 90 ns, PDSO32 |
| 封装： | TSOP1-32 |
| 文件页数： | 24/28页 |
| 文件大小： | 257K |
| 代理商： | W29C040T-90N |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页当前第24页第25页第26页第27页第28页
W29C040
Publication Release Date: Aug. 14, 2006
- 5 -
Revision A11
software data protection feature. To reset the device to unprotected mode, a six-byte command
sequence is required. For information about specific codes, see the Command Codes for Software
Data Protection in the Table of Operating Modes. For information about timing waveforms, see the
timing diagrams below.
6.4
Hardware Data Protection
The integrity of the data stored in the W29C040 is also hardware protected in the following ways:
(1) Noise/Glitch Protection: A #WE pulse of less than 15 nS in duration will not initiate a write cycle.
(2) VDD Power Up/Down Detection: The write and read operation are inhibited when VDD is less than
2.5V.
(3) Write Inhibit Mode: Forcing #OE low, #CE high, or #WE high will inhibit the write operation. This
prevents inadvertent writes during power-up or power-down periods.
(4) VDD power-on delay: When VDD has reach its sense level, the device will automatically time-out 10
mS before any write (erase/program) operation.
6.5
Chip Erase Modes
The entire device can be erased by using a six-byte software command code. See the Software Chip
Erase Timing Diagram.
6.6
Boot Block Operation
There are two boot blocks (16K bytes each) in this device, which can be used to store boot code. One
of them is located in the first 16K bytes and the other is located in the last 16K bytes of the memory.
The first 16K or last 16K of the memory can be set as a boot block by using a seven-byte command
sequence.
See Command Codes for Boot Block Lockout Enable for the specific code. Once this feature is set the
data for the designated block cannot be erased or programmed (programming lockout); a regular
programming method can change other memory locations. Once the boot block programming lockout
feature is activated, the chip erase function will be disabled. In order to detect whether the boot block
feature is set on the two 16K blocks, users can perform a six-byte command sequence: enter the
product identification mode (see Command Codes for Identification/Boot Block Lockout Detection for
specific code), and then read from address "00002 hex" (for the first 16K bytes) or "7FFF2 hex" (for
the last 16K bytes). If the output data is "FF hex," the boot block programming lockout feature is
activated; if the output data is "FE hex," the lockout feature is inactivated and the block can be
programmed.
To return to normal operation, perform a three-byte command sequence to exit the identification
mode. For the specific code, see Command Codes for Identification/Boot Block Lockout Detection.
相关PDF资料 |
PDF描述 |
|---|---|
| WED2ZL361MS26BC | 1M X 36 ZBT SRAM, 2.6 ns, PBGA119 |
| W3E32M72S-266BC | 32M X 72 DDR DRAM, 0.75 ns, PBGA219 |
| W3HG128M72AEF665F1MCG | DDR DRAM MODULE, DMA240 |
| WS128K32-100G4QE | 512K X 8 MULTI DEVICE SRAM MODULE, 100 ns, CQFP68 |
| WS128K32N-70HME | 512K X 8 MULTI DEVICE SRAM MODULE, 70 ns, CHIP66 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| W29C101-12 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x16 Flash EEPROM |
| W29C101-12B | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x16 Flash EEPROM |
| W29C101-70 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x16 Flash EEPROM |
| W29C101-70B | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x16 Flash EEPROM |
| W29C101-90 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x16 Flash EEPROM |
发布紧急采购，3分钟左右您将得到回复。