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参数资料
| 型号： | W9412G6JH-5I |
| 厂商： | Winbond Electronics |
| 文件页数： | 4/53页 |
| 文件大小： | 0K |
| 描述： | IC DDR SDRAM 128MBIT 66TSOPII |
| 标准包装： | 200 |
| 格式 - 存储器： | RAM |
| 存储器类型： | DDR SDRAM |
| 存储容量： | 128M（8Mx16） |
| 速度： | 200MHz |
| 接口： | 并联 |
| 电源电压： | 2.3 V ~ 2.7 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 66-TSSOP（0.400"，10.16mm 宽） |
| 供应商设备封装： | 66-TSOP II |
| 包装： | 托盘 |
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W9412G6JH
1. GENERAL DESCRIPTION
W9412G6JH is a CMOS Double Data Rate synchronous dynamic random access memory (DDR
SDRAM); organized as 2M words ? 4 banks ? 16 bits. W9412G6JH delivers a data bandwidth of up to
500M words per second (-4). To fully comply with the personal computer industrial standard,
W9412G6JH is sorted into the following speed grades: -4, -5, -5I, -5K, -6 and -6I. The -4 is compliant
to the DDR500/CL3 and CL4 specification. The -5/-5I/-5K grade parts are compliant to the
DDR400/CL3 specification (the -5I industrial grade parts is guaranteed to support - 40°C ≤ T A ≤ 85°C ,
the -5K automotive grade parts is guaranteed to support - 40°C ≤ T A ≤ 105°C). The -6/-6I grade parts
is compliant to the DDR333/CL2.5 specification (the -6I industrial grade parts is guaranteed to support
- 40°C ≤ T A ≤ 85°C ).
All Input reference to the positive edge of CLK (except for DQ, DM and CKE). The timing reference
point for the differential clock is when the CLK and CLK signals cross during a transition. Write and
Read data are synchronized with the both edges of DQS (Data Strobe).
By having a programmable Mode Register, the system can change burst length, latency cycle,
interleave or sequential burst to maximize its performance. W9412G6JH is ideal for main memory in
high performance applications.
2. FEATURES
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2.5V ± 0.2V Power Supply for DDR400/333
2.4V~2.7V Power Supply for DDR500
Up to 250 MHz Clock Frequency
Double Data Rate architecture; two data transfers per clock cycle
Differential clock inputs (CLK and CLK )
DQS is edge-aligned with data for Read; center-aligned with data for Write
CAS Latency: 2, 2.5, 3 and 4
Burst Length: 2, 4 and 8
Auto Refresh and Self Refresh
Precharged Power Down and Active Power Down
Write Data Mask
Write Latency = 1
15.6 μS Refresh interval (4K/64 mS Refresh), @ 0°C ≤ T A ≤ 85°C
3.9 μS Refresh interval (4K/16 mS Refresh), @ 85°C < T A ≤ 105°C
Maximum burst refresh cycle: 8
Interface: SSTL_2
Packaged in TSOP II 66-pin, using Lead free materials with RoHS compliant
* Not support self refresh function with T A > 85°C
Publication Release Date: Jan. 14, 2014
-4-
Revision: A04
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相关代理商/技术参数 |
参数描述 |
|---|---|
| W9412G6JH-5TR | 制造商:Winbond Electronics Corp 功能描述:128M DDR SDRAM X16 200MHZ, 65N |
| W942 | 制造商:Performance Tool 功能描述:6 Piece Hook and Pick Set 制造商:PERFORMANCE TOOLS 功能描述:6 PC HOOK AND PICK SET |
| W942508BH | 制造商:未知厂家 制造商全称:未知厂家 功能描述:DRAM |
| W942508CH | 制造商:WINBOND 制造商全称:Winbond 功能描述:8M x 4 BANKS x 8 BIT DDR SDRAM |
| W942508CH-5 | 制造商:WINBOND 制造商全称:Winbond 功能描述:8M x 4 BANKS x 8 BIT DDR SDRAM |
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