参数资料
型号: W9412G6JH-5I
厂商: Winbond Electronics
文件页数: 9/53页
文件大小: 0K
描述: IC DDR SDRAM 128MBIT 66TSOPII
标准包装: 200
格式 - 存储器: RAM
存储器类型: DDR SDRAM
存储容量: 128M(8Mx16)
速度: 200MHz
接口: 并联
电源电压: 2.3 V ~ 2.7 V
工作温度: -40°C ~ 85°C
封装/外壳: 66-TSSOP(0.400",10.16mm 宽)
供应商设备封装: 66-TSOP II
包装: 托盘
W9412G6JH
8. FUNCTIONAL DESCRIPTION
8.1
Power Up Sequence
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
CLK
CLK
Apply power and attempt to CKE at a low state ( ≤ 0.2V), all other inputs may be undefined
1) Apply V DD before or at the same time as V DDQ .
2) Apply V DDQ before or at the same time as V TT and V REF .
Start Clock and maintain stable condition for 200 μS (min.).
After stable power and clock, apply NOP and take CKE high.
Issue precharge command for all banks of the device.
Issue EMRS (Extended Mode Register Set) to enable DLL and establish Output Driver Type.
Issue MRS (Mode Register Set) to reset DLL and set device to idle with bit A8.
(An additional 200 cycles(min) of clock are required for DLL Lock before any executable
command applied.)
Issue precharge command for all banks of the device.
Issue two or more Auto Refresh commands.
Issue MRS-Initialize device operation with the reset DLL bit deactivated A8 to low.
Command
PREA
t RP
EMRS
2 Clock min.
MRS
2 Clock min.
PREA
t RP
AREF
t RFC
AREF
t RFC
MRS
2 Clock min.
ANY
CMD
200 Clock min.
Inputs
maintain stable
for 200 μS min.
Enable DLL
DLL reset with A8 = High
Disable DLL reset with A8 = Low
Initialization sequence after power-up
Publication Release Date: Jan. 14, 2014
-9-
Revision: A04
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