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参数资料
| 型号： | W9464G2IB-4 |
| 厂商： | WINBOND ELECTRONICS CORP |
| 元件分类： | DRAM |
| 英文描述： | 512K X 32 DDR DRAM, 0.6 ns, PBGA144 |
| 封装： | 12 X 12 MM, 1.40 MM HEIGHT, ROHS COMPLIANT, LFBGA-144 |
| 文件页数： | 12/49页 |
| 文件大小： | 886K |
| 代理商： | W9464G2IB-4 |
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W9464G2IB
Publication Release Date: Aug. 06, 2009
- 2 -
Revision A01
7.10.3
CAS Latency field (A6 to A4)................................................................................................17
7.10.4
DLL Reset bit (A8)................................................................................................................17
7.10.5
Mode Register /Extended Mode register change bits (BA0, BA1) ........................................17
7.10.6
Extended Mode Register field ..............................................................................................18
7.10.7
Reserved field ......................................................................................................................18
8. OPERATION MODE.........................................................................................................................................19
8.1
Simplified Truth Table.........................................................................................................................19
8.2
Function Truth Table ..........................................................................................................................20
8.3
Function Truth Table, continued.........................................................................................................21
8.4
Function Truth Table, continued.........................................................................................................22
8.5
Function Truth Table for CKE.............................................................................................................23
8.6
Simplified Stated Diagram ..................................................................................................................24
9. ELECTRICAL CHARACTERISTICS.................................................................................................................25
9.1
Absolute Maximum Ratings................................................................................................................25
9.2
Recommended DC Operating Conditions ..........................................................................................25
9.3
Capacitance .......................................................................................................................................26
9.4
Leakage and Output Buffer Characteristics........................................................................................26
9.5
DC Characteristics..............................................................................................................................27
9.6
AC Characteristics and Operating Condition ......................................................................................28
9.7
AC Test Conditions.............................................................................................................................29
10. TIMING WAVEFORMS ....................................................................................................................................31
10.1
Command Input Timing ......................................................................................................................31
10.2
Timing of the CLK Signals ..................................................................................................................31
10.3
Read Timing (Burst Length = 4) .........................................................................................................32
10.4
Write Timing (Burst Length = 4)..........................................................................................................33
10.5
DM, DATA MASK (W9464G2IB) ........................................................................................................34
10.6
Mode Register Set (MRS) Timing.......................................................................................................35
10.7
Extend Mode Register Set (EMRS) Timing ........................................................................................36
10.8
Auto-precharge Timing (Read Cycle, CL = 2).....................................................................................37
10.9
Auto-precharge Timing (Read cycle, CL = 2), continued....................................................................38
10.10 Auto-precharge Timing (Write Cycle) .................................................................................................39
10.11 Read Interrupted by Read (CL = 2, BL = 2, 4, 8)................................................................................40
10.12 Burst Read Stop (BL = 8) ...................................................................................................................40
10.13 Read Interrupted by Write & BST (BL = 8) .........................................................................................41
10.14 Read Interrupted by Precharge (BL = 8) ............................................................................................41
10.15 Write Interrupted by Write (BL = 2, 4, 8).............................................................................................42
10.16 Write Interrupted by Read (CL = 2, BL = 8) ........................................................................................42
10.17 Write Interrupted by Read (CL = 3, BL = 4) ........................................................................................43
10.18 Write Interrupted by Precharge (BL = 8).............................................................................................43
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相关代理商/技术参数 |
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| W9464G6IB | 制造商:WINBOND 制造商全称:Winbond 功能描述:1M × 4 BANKS × 16 BITS DDR SDRAM |
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