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参数资料
| 型号： | W9464G2IB-4 |
| 厂商： | WINBOND ELECTRONICS CORP |
| 元件分类： | DRAM |
| 英文描述： | 512K X 32 DDR DRAM, 0.6 ns, PBGA144 |
| 封装： | 12 X 12 MM, 1.40 MM HEIGHT, ROHS COMPLIANT, LFBGA-144 |
| 文件页数： | 14/49页 |
| 文件大小： | 886K |
| 代理商： | W9464G2IB-4 |
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W9464G2IB
Publication Release Date: Aug. 06, 2009
- 21 -
Revision A01
8.3 Function Truth Table, continued
CURRENT
STATE
CS
RAS
CAS
WE
ADDRESS
COMMAND
ACTION
NOTES
H
X
DSL
Continue burst to end
L
H
X
NOP
Continue burst to end
L
H
L
X
BST
ILLEGAL
L
H
L
H
BA, CA, A8
READ/READA
ILLEGAL
L
H
L
BA, CA, A8
WRIT/WRITA
ILLEGAL
3
L
H
BA, RA
ACT
ILLEGAL
3
L
H
L
BA, A8
PRE/PREA
ILLEGAL
L
H
X
AREF/SELF
ILLEGAL
Read with
Auto-
precharge
L
Op-Code
MRS/EMRS
ILLEGAL
H
X
DSL
Continue burst to end
L
H
X
NOP
Continue burst to end
L
H
L
X
BST
ILLEGAL
L
H
L
H
BA, CA, A8
READ/READA
ILLEGAL
L
H
L
BA, CA, A8
WRIT/WRITA
ILLEGAL
L
H
BA, RA
ACT
ILLEGAL
3
L
H
L
BA, A8
PRE/PREA
ILLEGAL
3
L
H
X
AREF/SELF
ILLEGAL
Write with
Auto-
precharge
L
Op-Code
MRS/EMRS
ILLEGAL
H
X
DSL
NOP-> Idle after tRP
L
H
X
NOP
NOP-> Idle after tRP
L
H
L
X
BST
ILLEGAL
L
H
L
H
BA, CA, A8
READ/READA
ILLEGAL
3
L
H
L
BA, CA, A8
WRIT/WRITA
ILLEGAL
3
L
H
BA, RA
ACT
ILLEGAL
3
L
H
L
BA, A8
PRE/PREA
Idle after tRP
L
H
X
AREF/SELF
ILLEGAL
Precharging
L
Op-Code
MRS/EMRS
ILLEGAL
H
X
DSL
NOP-> Row active after tRCD
L
H
X
NOP
NOP-> Row active after tRCD
L
H
L
X
BST
ILLEGAL
L
H
L
H
BA, CA, A8
READ/READA
ILLEGAL
3
L
H
L
BA, CA, A8
WRIT/WRITA
ILLEGAL
3
L
H
BA, RA
ACT
ILLEGAL
3
L
H
L
BA, A8
PRE/PREA
ILLEGAL
3
L
H
X
AREF/SELF
ILLEGAL
Row
Activating
L
Op-Code
MRS/EMRS
ILLEGAL
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相关代理商/技术参数 |
参数描述 |
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| W9464G6IB | 制造商:WINBOND 制造商全称:Winbond 功能描述:1M × 4 BANKS × 16 BITS DDR SDRAM |
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| W9464G6JH | 制造商:WINBOND 制造商全称:Winbond 功能描述:1M ? 4 BANKS ? 16 BITS DDR SDRAM |
| W9464G6JH-4 | 制造商:Winbond Electronics Corp 功能描述:IC DDR SDRAM 64M 200MHZ 66TSOP |
| W9464G6JH-5 | 制造商:Winbond Electronics Corp 功能描述:64MBIT DDRI 制造商:Winbond Electronics Corp 功能描述:IC DDR SDRAM 64M 200MHZ 66TSOP |
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