参数资料
型号: W9464G2IB-4
厂商: WINBOND ELECTRONICS CORP
元件分类: DRAM
英文描述: 512K X 32 DDR DRAM, 0.6 ns, PBGA144
封装: 12 X 12 MM, 1.40 MM HEIGHT, ROHS COMPLIANT, LFBGA-144
文件页数: 13/49页
文件大小: 886K
代理商: W9464G2IB-4
W9464G2IB
Publication Release Date: Aug. 06, 2009
- 20 -
Revision A01
8.2 Function Truth Table
(Note 1)
CURRENT
STATE
CS RAS
CAS
WE
ADDRESS
COMMAND
ACTION
NOTES
H
X
DSL
NOP
L
H
X
NOP/BST
NOP
L
H
L
H
BA, CA, A8
READ/READA
ILLEGAL
3
L
H
L
BA, CA, A8
WRIT/WRITA
ILLEGAL
3
L
H
BA, RA
ACT
Row activating
L
H
L
BA, A8
PRE/PREA
NOP
L
H
X
AREF/SELF
Refresh or Self refresh
2
Idle
L
Op-Code
MRS/EMRS
Mode register accessing
2
H
X
DSL
NOP
L
H
X
NOP/BST
NOP
L
H
L
H
BA, CA, A8
READ/READA
Begin read: Determine AP
4
L
H
L
BA, CA, A8
WRIT/WRITA
Begin write: Determine AP
4
L
H
BA, RA
ACT
ILLEGAL
3
L
H
L
BA, A8
PRE/PREA
Precharge
5
L
H
X
AREF/SELF
ILLEGAL
Row Active
L
Op-Code
MRS/EMRS
ILLEGAL
H
X
DSL
Continue burst to end
L
H
X
NOP
Continue burst to end
L
H
L
X
BST
Burst stop
L
H
L
H
BA, CA, A8
READ/READA
Term burst, new read: Determine AP
6
L
H
L
BA, CA, A8
WRIT/WRITA
ILLEGAL
L
H
BA, RA
ACT
ILLEGAL
3
L
H
L
BA, A8
PRE/PREA
Term burst, precharging
L
H
X
AREF/SELF
ILLEGAL
Read
L
Op-Code
MRS/EMRS
ILLEGAL
H
X
DSL
Continue burst to end
L
H
X
NOP
Continue burst to end
L
H
L
X
BST
ILLEGAL
L
H
L
H
BA, CA, A8
READ/READA
Term burst, start read: Determine AP
6, 7
L
H
L
BA, CA, A8
WRIT/WRITA
Term burst, start read: Determine AP
6
L
H
BA, RA
ACT
ILLEGAL
3
L
H
L
BA, A8
PRE/PREA
Term burst, Precharging
8
L
H
X
AREF/SELF
ILLEGAL
Write
L
Op-Code
MRS/EMRS
ILLEGAL
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