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参数资料
| 型号： | W9464G2IB-4 |
| 厂商： | WINBOND ELECTRONICS CORP |
| 元件分类： | DRAM |
| 英文描述： | 512K X 32 DDR DRAM, 0.6 ns, PBGA144 |
| 封装： | 12 X 12 MM, 1.40 MM HEIGHT, ROHS COMPLIANT, LFBGA-144 |
| 文件页数： | 2/49页 |
| 文件大小： | 886K |
| 代理商： | W9464G2IB-4 |
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W9464G2IB
Publication Release Date: Aug. 06, 2009
- 10 -
Revision A01
7. FUNCTIONAL DESCRIPTION
7.1 Power Up Sequence
(1) Apply power and attempt to CKE at a low state (
≤ 0.2V), all other inputs may be undefined
1) Apply VDD before or at the same time as VDDQ.
2) Apply VDDQ before or at the same time as VTT and VREF.
(2) Start Clock and maintain stable condition for 200 S (min.).
(3) After stable power and clock, apply NOP and take CKE high.
(4) Issue precharge command for all banks of the device.
(5) Issue EMRS (Extended Mode Register Set) to enable DLL and establish Output Driver Type.
(6) Issue MRS (Mode Register Set) to reset DLL and set device to idle with bit A8.
(An additional 200 cycles(min) of clock are required for DLL Lock before any executable
command applied.)
(7) Issue precharge command for all banks of the device.
(8) Issue two or more Auto Refresh commands.
(9) Issue MRS-Initialize device operation with the reset DLL bit deactivated A8 to low.
2 Clock min.
tRFC
MRS
CLK
Command
ANY
CMD
AREF
PREA
MRS
EMRS
PREA
CLK
tRFC
tRP
Enable DLL
DLL reset with A8 = High
Disable DLL reset with A8 = Low
200 Clock min.
2 Clock min.
Inputs
maintain stable
for 200 S min.
Initialization sequence after power-up
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相关代理商/技术参数 |
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| W9464G6IB | 制造商:WINBOND 制造商全称:Winbond 功能描述:1M × 4 BANKS × 16 BITS DDR SDRAM |
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| W9464G6JH-5 | 制造商:Winbond Electronics Corp 功能描述:64MBIT DDRI 制造商:Winbond Electronics Corp 功能描述:IC DDR SDRAM 64M 200MHZ 66TSOP |
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