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参数资料
| 型号： | W948D2FBJX5I |
| 厂商： | WINBOND ELECTRONICS CORP |
| 元件分类： | DRAM |
| 英文描述： | 4M X 32 DDR DRAM, 5 ns, PBGA90 |
| 封装： | 8 X 13 MM, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, VFBGA-90 |
| 文件页数： | 34/60页 |
| 文件大小： | 1147K |
| 代理商： | W948D2FBJX5I |
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W948D6FB / W948D2FB
256Mb Mobile LPDDR
Publication Release Date : May, 24, 2011
- 4 -
Revision A01-003
1. GENERAL DESCRIPTION
W948D6FB / W948D2FB is a high-speed mobile double data rate synchronous dynamic random access memory
(LPDDR SDRAM), Using pipelined architecture , An access to the LPDDR SDRAM is burst oriented. Consecutive
memory location in one page can be accessed at a burst length of 2, 4, 8 and 16 when a bank and row is selected by
an ACTIVE command. Column addresses are automatically generated by the LPDDR SDRAM internal counter in
burst operation. Random column read is also possible by providing its address at each clock cycle. The multiple
bank nature enables interleaving among internal banks to hide the pre-charging time. By setting programmable
Mode Registers, the system can change burst length, latency cycle, interleave or sequential burst to maximize its
performance. The device supports special power saving functions such as Partial Array Self Refresh (PASR) and
Automatic Temperature Compensated Self Refresh (ATCSR).
2. FEATURES
VDD = 1.7~1.95V
VDDQ = 1.7~1.95V
Data width: x16 / x32
Clock rate: 200MHz(-5),166MHz (-6), 133MHz (-75)
Partial Array Self-Refresh(PASR)
Auto Temperature Compensated Self-Refresh(ATCSR)
Power Down Mode
Deep Power Down Mode (DPD Mode)
Programmable output buffer driver strength
Four internal banks for concurrent operation
Data mask (DM) for write data
Clock Stop capability during idle periods
Auto Pre-charge option for each burst access
Double data rate for data output
Differential clock inputs (CK and
CK )
Bidirectional, data strobe (DQS)
CAS Latency: 2 and 3
Burst Length: 2, 4, 8 and 16
Burst Type: Sequential or Interleave
64 ms Refresh period
Interface: LVCMOS
Support package:
60 balls VFBGA (x16)
90 balls VFBGA (x32)
Operating Temperature Range
Extended (-25℃ to + 85 ℃)
Industrial (-40℃ to + 85 ℃)
相关PDF资料 |
PDF描述 |
|---|---|
| W949D6CBHX6G | 32M X 16 DDR DRAM, 5 ns, PBGA60 |
| W949D2CBJX5I | 16M X 32 DDR DRAM, 5 ns, PBGA90 |
| W949D6CBHX6E | 32M X 16 DDR DRAM, 5 ns, PBGA60 |
| W949D2CBJX6G | 16M X 32 DDR DRAM, 5 ns, PBGA90 |
| W963B6BBN80E | 512K X 16 PSEUDO STATIC RAM, 75 ns, PBGA48 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| W948D2FBJX5I TR | 制造商:Winbond Electronics Corp 功能描述:256M MDDR, X32, 200MHZ, INDUST |
| W948D2FBJX6E | 制造商:Winbond Electronics Corp 功能描述:DRAM Chip DDR SDRAM 256M-Bit 8Mx32 1.8V 90-Pin VFBGA 制造商:Winbond Electronics 功能描述:LOW POWER DRAM 制造商:Winbond Electronics Corp 功能描述:IC MEMORY |
| W948D2FBJX6ETR | 制造商:Winbond Electronics Corp 功能描述:256M MDDR, X32, 166MHZ, 65NM |
| W948D2FBJX6G | 制造商:WINBOND 制造商全称:Winbond 功能描述:256Mb Mobile LPDDR |
| W948D6FB | 制造商:WINBOND 制造商全称:Winbond 功能描述:256Mb Mobile LPDDR |
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