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参数资料
型号： W949D2CBJX6G
厂商： WINBOND ELECTRONICS CORP
元件分类： DRAM
英文描述： 16M X 32 DDR DRAM, 5 ns, PBGA90
封装： 8 X 13 MM, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, VFBGA-90
文件页数： 1/60页
文件大小： 1160K
代理商： W949D2CBJX6G
W949D6CB / W949D2CB
512Mb Mobile LPDDR
Publication Release Date: Jun, 14, 2011
- 1 -
Revision A01-006
TABLE OF CONTENTS
1. GENERAL DESCRIPTION ................................................................................................. 4
2. FEATURES ......................................................................................................................... 4
3. PIN CONFIGURATION ....................................................................................................... 5
3.1 Ball Assignment: LPDDR X16 .................................................................................................. 5
3.2 Ball Assignment: LPDDR X32 .................................................................................................. 5
4. PIN DESCRIPTION ............................................................................................................. 6
4.1 Signal Descriptions................................................................................................................... 6
4.2 Addressing Table ..................................................................................................................... 7
5. BLOCK DIAGRAM.............................................................................................................. 8
5.1 Block Diagram .......................................................................................................................... 8
5.2 Simplified State Diagram .......................................................................................................... 9
6. FUNCTION DESCRIPTION ...............................................................................................10
6.1 Initialization ............................................................................................................................ 10
6.1.1 Initialization Flow Diagram .............................................................................................................11
6.1.2 Initialization Waveform Sequence ..................................................................................................12
6.2 Register Definition .................................................................................................................. 12
6.2.1 Mode Register Set Operation.........................................................................................................12
6.2.2 Mode Register Definition ................................................................................................................13
6.2.3. Burst Length ..................................................................................................................................13
6.3 Burst Definition ....................................................................................................................... 14
6.4 Burst Type.............................................................................................................................. 15
6.5 Read Latency ......................................................................................................................... 15
6.6 Extended Mode Register Description ..................................................................................... 15
6.6.1 Extended Mode Register Definition................................................................................................16
6.7 Status Register Read ............................................................................................................. 16
6.7.1 SRR Register (A[n:0] = 0) ..............................................................................................................17
6.7.2 Status Register Read Timing Diagram...........................................................................................18
6.8 Partial Array Self Refresh ....................................................................................................... 19
6.9 Automatic Temperature Compensated Self Refresh............................................................... 19
6.10 Output Drive Strength........................................................................................................... 19
6.11 Commands........................................................................................................................... 19
6.11.1 Basic Timing Parameters for Commands ....................................................................................19
6.11.2 Truth Table - Commands .............................................................................................................20
6.11.3 Truth Table - DM Operations .......................................................................................................21
6.11.4 Truth Table - CKE ........................................................................................................................21
6.11.5 Truth Table - Current State BANKn - Command to BANKn.........................................................22
6.11.6 Truth Table - Current State BANKn, Command to BANKn..........................................................23
7. OPERATION ......................................................................................................................24
7.1. Deselect ................................................................................................................................ 24
7.2. No Operation......................................................................................................................... 24
7.2.1 NOP Command ..............................................................................................................................25
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相关代理商/技术参数
参数描述
W949D2KBJX5E 制造商:Winbond Electronics Corp 功能描述:512M MDDR, X32, 200MHZ 制造商:Winbond Electronics Corp 功能描述:IC MEMORY
W949D2KBJX5I 制造商:Winbond Electronics Corp 功能描述:IC MEMORY
W949D2KBJX6E 制造商:Winbond Electronics Corp 功能描述:512M MDDR, X32, 166MHZ 制造商:Winbond Electronics Corp 功能描述:IC MEMORY
W949D6CB 制造商:WINBOND 制造商全称:Winbond 功能描述:512Mb Mobile LPDDR
W949D6CBHX5E 功能描述:IC LPDDR SDRAM 512MBIT 60VFBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1 系列:- 格式 - 存储器:闪存 存储器类型:闪存 - NAND 存储容量:4G（256M x 16） 速度:- 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:48-TFSOP（0.724"，18.40mm 宽） 供应商设备封装:48-TSOP I 包装:Digi-Reel® 其它名称:557-1461-6
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