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参数资料
| 型号： | W949D2CBJX6G |
| 厂商： | WINBOND ELECTRONICS CORP |
| 元件分类： | DRAM |
| 英文描述： | 16M X 32 DDR DRAM, 5 ns, PBGA90 |
| 封装： | 8 X 13 MM, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, VFBGA-90 |
| 文件页数： | 32/60页 |
| 文件大小： | 1160K |
| 代理商： | W949D2CBJX6G |
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W949D6CB / W949D2CB
512Mb Mobile LPDDR
Publication Release Date: Jun, 14, 2011
- 38 -
Revision A01-006
7.6.10 Interrupting Write to Read
Data for any Write burst may be truncated by a subsequent READ command as shown in the figure below. Note that
the only data-in pairs that are registered prior to the tWTR period are written to the internal array, and any subsequent
data-in must be masked with DM.
BA,Col n
BA,Col b
WRITE
NOP
CK
Command
Address
1) Dl b = Data in to column b. DO n=Data out from column n.
2) An interrupted burst of 4 is shown, 2 data elements are written.
3 subsequent elements of Data In are applied in the programmed order following DI b.
3) tWTR is referenced from the positive clock edge after the last Data In pair.
4)A10 is LOW with the WRITE command (Auto Precharge is disabled)
5) The READ and WRITE commands are to the same device but not necessarily to the same bank.
NOP
READ
= Don't Care
DQS
DQ
DM
tDQSSmax
BA,Col n
tWTR
CL=3
DI b
DO n
NOP
7.6.11 Write to Precharge
Data for any WRITE burst may be followed by a subsequent PRECHARGE command to the same bank (provided
Auto Precharge was not activated). To follow a WRITE without truncating the WRITE burst, tWR should be met as
shown in the figure below.
7.6.12 Non-Interrupting Write to Precharge
BA,Col n
BA,Col b
WRITE
NOP
PRE
CK
Command
Address
1) Dl b = Data in to column b
3 subsequent elements of Data In are applied in the programmed order following DI b.
2) A non-interrupted burst of 4 is shown.
3) tWR is referenced from the positive clock edge after the last Data In pair.
4) A10 is LOW with the WRITE command (Auto Precharge is disabled)
NOP
= Don't Care
DQS
DQ
DM
tDQSSmax
BA a (or all)
tWR
DI b
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相关代理商/技术参数 |
参数描述 |
|---|---|
| W949D2KBJX5E | 制造商:Winbond Electronics Corp 功能描述:512M MDDR, X32, 200MHZ 制造商:Winbond Electronics Corp 功能描述:IC MEMORY |
| W949D2KBJX5I | 制造商:Winbond Electronics Corp 功能描述:IC MEMORY |
| W949D2KBJX6E | 制造商:Winbond Electronics Corp 功能描述:512M MDDR, X32, 166MHZ 制造商:Winbond Electronics Corp 功能描述:IC MEMORY |
| W949D6CB | 制造商:WINBOND 制造商全称:Winbond 功能描述:512Mb Mobile LPDDR |
| W949D6CBHX5E | 功能描述:IC LPDDR SDRAM 512MBIT 60VFBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1 系列:- 格式 - 存储器:闪存 存储器类型:闪存 - NAND 存储容量:4G（256M x 16） 速度:- 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:48-TFSOP（0.724"，18.40mm 宽） 供应商设备封装:48-TSOP I 包装:Digi-Reel® 其它名称:557-1461-6 |
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