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参数资料
| 型号： | W949D2CBJX6G |
| 厂商： | WINBOND ELECTRONICS CORP |
| 元件分类： | DRAM |
| 英文描述： | 16M X 32 DDR DRAM, 5 ns, PBGA90 |
| 封装： | 8 X 13 MM, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, VFBGA-90 |
| 文件页数： | 43/60页 |
| 文件大小： | 1160K |
| 代理商： | W949D2CBJX6G |
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W949D6CB / W949D2CB
512Mb Mobile LPDDR
Publication Release Date: Jun, 14, 2011
- 48 -
Revision A01-006
8.4 IDD Specification Parameters and Test Conditions
8.4.1 IDD Specification Parameters and Test Conditions
[Recommended Operating Conditions; Notes 1-4]
(512Mb, X16)
PARAMETER
SYMBOL
TEST CONDITION
- 5
- 6
- 75
UNIT
Operating one
bank active-
precharge
current
IDD0
tRC = tRCmin ; tCK = tCKmin ; CKE is HIGH;
CS is HIGH between valid
commands; address inputs are SWITCHING; data bus inputs are
STABLE
40
38
35
mA
Precharge
power-down
standby current
IDD2P
all banks idle, CKE is LOW;
CS is HIGH, tCK = tCKmin ;
address and control inputs are SWITCHING; data bus inputs
are STABLE
Low
power
0.6
mA
Normal
power
0.8
Precharge
power-down
standby current
with clock stop
IDD2PS
all banks idle, CKE is LOW;
CS is HIGH, CK = LOW,
=
HIGH; address and control inputs are SWITCHING; data bus
inputs are STABLE
Low
power
0.6
mA
Normal
power
0.8
Precharge non
power-down
standby current
IDD2N
all banks idle, CKE is HIGH;
CS is HIGH, tCK = tCKmin; address and
control inputs are SWITCHING; data bus inputs are STABLE
10
mA
Precharge non
power-down
standby current
with clock stop
IDD2NS
all banks idle, CKE is HIGH;
CS is HIGH, CK = LOW,
= HIGH;
address and control inputs are SWITCHING; data bus inputs are STABLE
3
mA
Active power-
down standby
current
IDD3P
one bank active, CKE is LOW;
CS is HIGH, tCK = tCKmin;address and
control inputs are SWITCHING; data bus inputs are STABLE
2
mA
Active power-
down standby
current with
clock stop
IDD3PS
one bank active, CKE is LOW;
CS is HIGH, CK = LOW,
= HIGH;
address and control inputs are SWITCHING; data bus inputs are STABLE
2
mA
Active non
power-down
standby current
IDD3N
one bank active, CKE is HIGH;
CS is HIGH, tCK = tCKmin; address
and control inputs are SWITCHING; data bus inputs are STABLE
15
mA
Active non
power-down
standby current
with clock stop
IDD3NS
one bank active, CKE is HIGH;
CS is HIGH, CK = LOW,
= HIGH;
address and control inputs are SWITCHING; data bus inputs are STABLE
8
mA
Operating burst
read current
IDD4R
one bank active; BL = 4; CL = 3; tCK = tCKmin ; continuous read bursts;
IOUT = 0 mA; address inputs are SWITCHING; 50% data change each
burst transfer
75
70
mA
Operating burst
write current
IDD4W
one bank active; BL = 4; t CK = t CKmin ; continuous write
bursts; address inputs are SWITCHING; 50% data change each burst
transfer
55
50
mA
Auto-Refresh
Current
IDD5
tRC = tRFCmin ; tCK = tCKmin ; burst refresh; CKE is HIGH; address and
control inputs are SWITCHING; data bus inputs are STABLE
75
mA
Deep Power-
Down current
IDD8(4)
Address and control inputs are STABLE; data bus inputs are STABLE
10
uA
CK
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相关代理商/技术参数 |
参数描述 |
|---|---|
| W949D2KBJX5E | 制造商:Winbond Electronics Corp 功能描述:512M MDDR, X32, 200MHZ 制造商:Winbond Electronics Corp 功能描述:IC MEMORY |
| W949D2KBJX5I | 制造商:Winbond Electronics Corp 功能描述:IC MEMORY |
| W949D2KBJX6E | 制造商:Winbond Electronics Corp 功能描述:512M MDDR, X32, 166MHZ 制造商:Winbond Electronics Corp 功能描述:IC MEMORY |
| W949D6CB | 制造商:WINBOND 制造商全称:Winbond 功能描述:512Mb Mobile LPDDR |
| W949D6CBHX5E | 功能描述:IC LPDDR SDRAM 512MBIT 60VFBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1 系列:- 格式 - 存储器:闪存 存储器类型:闪存 - NAND 存储容量:4G（256M x 16） 速度:- 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:48-TFSOP（0.724"，18.40mm 宽） 供应商设备封装:48-TSOP I 包装:Digi-Reel® 其它名称:557-1461-6 |
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