参数资料
型号: W949D2CBJX6G
厂商: WINBOND ELECTRONICS CORP
元件分类: DRAM
英文描述: 16M X 32 DDR DRAM, 5 ns, PBGA90
封装: 8 X 13 MM, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, VFBGA-90
文件页数: 19/60页
文件大小: 1160K
代理商: W949D2CBJX6G
W949D6CB / W949D2CB
512Mb Mobile LPDDR
Publication Release Date: Jun, 14, 2011
- 26 -
Revision A01-006
7.3.2 Mode Register Set Command Timing
CK
Command
MRS
: Don't Care
NOTE:Code=Mode Register / Extended Mode Register selection
(BA0,BA1)and op-code (A0-An)
Code
Valid
NOP
tMRD
Address
7.4. Active
Before any READ or WRITE commands can be issued to a bank in the LPDDR SDRAM, a row in that bank must be
opened. This is accomplished by the ACTIVE command: BA0 and BA1 select the bank, and the address inputs
select the row to be activated. More than one bank can be active at any time.
Once a row is open, a READ or WRITE command could be issued to that row, subject to the tRCD specification.
A subsequent ACTIVE command to another row in the same bank can only be issued after the previous row has
been closed. The minimum time interval between two successive ACTIVE commands on the same bank is defined
by tRC.
7.4.1 Active Command
= Don't Care
(High)
CK
CKE
CS
RAS
CAS
WE
A0-An
BA0,BA1
RA
BA
BA=BANK Address, RA=Row
Address
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相关代理商/技术参数
参数描述
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W949D6CB 制造商:WINBOND 制造商全称:Winbond 功能描述:512Mb Mobile LPDDR
W949D6CBHX5E 功能描述:IC LPDDR SDRAM 512MBIT 60VFBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1 系列:- 格式 - 存储器:闪存 存储器类型:闪存 - NAND 存储容量:4G(256M x 16) 速度:- 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:48-TFSOP(0.724",18.40mm 宽) 供应商设备封装:48-TSOP I 包装:Digi-Reel® 其它名称:557-1461-6