- 您现在的位置：买卖IC网 > PDF目录68559 > W949D2CBJX6G (WINBOND ELECTRONICS CORP) 16M X 32 DDR DRAM, 5 ns, PBGA90 PDF资料下载
参数资料
| 型号： | W949D2CBJX6G |
| 厂商： | WINBOND ELECTRONICS CORP |
| 元件分类： | DRAM |
| 英文描述： | 16M X 32 DDR DRAM, 5 ns, PBGA90 |
| 封装： | 8 X 13 MM, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, VFBGA-90 |
| 文件页数： | 13/60页 |
| 文件大小： | 1160K |
| 代理商： | W949D2CBJX6G |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页当前第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页第44页第45页第46页第47页第48页第49页第50页第51页第52页第53页第54页第55页第56页第57页第58页第59页第60页
W949D6CB / W949D2CB
512Mb Mobile LPDDR
Publication Release Date: Jun, 14, 2011
- 20 -
Revision A01-006
6.11.2 Truth Table - Commands
NAME (FUNCTION)
CS
RAS CAS
WE
BA
A10/AP ADDR NOTES
DESELECT (NOP)
H
X
2
NO OPERATION (NOP)
L
H
X
2
ACTIVE (Select Bank and activate row)
L
H
Valid
Row
READ (Select bank and column and start read burst)
L
H
L
H
Valid
L
Col
READ with AP (Read Burst with Auto Precharge)
L
H
L
H
Valid
H
Col
3
WRITE (Select bank and column and start write burst)
L
H
L
Valid
L
Col
WRITE with AP (Write Burst with Auto Precharge)
L
H
L
Valid
H
Col
3
BURST TERMINATE or enter DEEP POWER DOWN
L
H
L
X
4, 5
PRECHARGE (Deactivate Row in selected bank)
L
H
L
Valid
L
X
6
PRECHARGE ALL (Deactivate rows in all banks)
L
H
L
X
H
X
6
AUTO REFRESH or enter SELF REFRESH
L
H
X
7, 8, 9
MODE REGISTER SET
L
Valid
Op-code
10
Notes:
1.
All states and sequences not shown are illegal or reserved.
2.
DESELECT and NOP are functionally interchangeable.
3.
Auto precharge is non-persistent. A10 High enables Auto precharge, while A10 Low disables Auto precharge.
4.
Burst Terminate applies to only Read bursts with Autoprecharge disabled. This command is undefined and should not be
used for Read with Auto precharge enabled, and for Write bursts.
5.
This command is BURST TERMINATE if CKE is High and DEEP POWER DOWN entry if CKE is Low.
6.
If A10 is low, bank address determines which bank is to be precharged. If A10 is high, all banks are precharged and
BA0~BA1 are dont care.
7.
This command is AUTO REFRESH if CKE is High and SELF REFRESH if CKE is low.
8.
All address inputs and I/O are dont care except for CKE. Internal refresh counters control bank and row addressing.
9.
All banks must be precharged before issuing an AUTO-REFRESH or SELF REFRESH command.
10.
BA0 and BA1 value select between MRS and EMRS.
11.
CKE is HIGH for all commands shown except SELF REFRESH and DEEP POWER-DOWN.
相关PDF资料 |
PDF描述 |
|---|---|
| W963B6BBN80E | 512K X 16 PSEUDO STATIC RAM, 75 ns, PBGA48 |
| W964A6BBN70E | 1M X 16 PSEUDO STATIC RAM, 65 ns, PBGA48 |
| W964L6ABN70E | 1M X 16 PSEUDO STATIC RAM, 65 ns, PBGA48 |
| W964L6ABN70I | 1M X 16 PSEUDO STATIC RAM, 65 ns, PBGA48 |
| W971GG6JB-25A | 64M X 16 DDR DRAM, 0.4 ns, PBGA84 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| W949D2KBJX5E | 制造商:Winbond Electronics Corp 功能描述:512M MDDR, X32, 200MHZ 制造商:Winbond Electronics Corp 功能描述:IC MEMORY |
| W949D2KBJX5I | 制造商:Winbond Electronics Corp 功能描述:IC MEMORY |
| W949D2KBJX6E | 制造商:Winbond Electronics Corp 功能描述:512M MDDR, X32, 166MHZ 制造商:Winbond Electronics Corp 功能描述:IC MEMORY |
| W949D6CB | 制造商:WINBOND 制造商全称:Winbond 功能描述:512Mb Mobile LPDDR |
| W949D6CBHX5E | 功能描述:IC LPDDR SDRAM 512MBIT 60VFBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1 系列:- 格式 - 存储器:闪存 存储器类型:闪存 - NAND 存储容量:4G（256M x 16） 速度:- 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:48-TFSOP（0.724"，18.40mm 宽） 供应商设备封装:48-TSOP I 包装:Digi-Reel® 其它名称:557-1461-6 |
发布紧急采购，3分钟左右您将得到回复。