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参数资料
| 型号： | W949D2CBJX6G |
| 厂商： | WINBOND ELECTRONICS CORP |
| 元件分类： | DRAM |
| 英文描述： | 16M X 32 DDR DRAM, 5 ns, PBGA90 |
| 封装： | 8 X 13 MM, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, VFBGA-90 |
| 文件页数： | 16/60页 |
| 文件大小： | 1160K |
| 代理商： | W949D2CBJX6G |
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W949D6CB / W949D2CB
512Mb Mobile LPDDR
Publication Release Date: Jun, 14, 2011
- 23 -
Revision A01-006
Accessing Mode Register: Starts with registration of a MODE REGISTER SET command and ends when tMRD has been
met. Once tMRD is met, the LPDDR SDRAM
will be in an all banks idle state.
Precharging All: Starts with the registration of a PRECHARGE ALL command and ends when tRP is met. Once tRP is met,
the bank will be in the idle state.
10.
Not bank-specific; requires that all banks are idle and no bursts are in progress.
11.
Not bank-specific. BURST TERMINATE affects the most recent READ burst, regardless of bank.
12.
Requires appropriate DM masking.
13.
A WRITE command may be applied after the completion of the READ burst; otherwise, a BURST TERMINATE must be
used to end the READ prior to asserting a WRITE command.
6.11.6 Truth Table - Current State BANKn, Command to BANKn
CURRENT
STATE
CS
RAS
CAS
WE
COMMAND
ACTION
NOTES
Any
H
X
DESELECT
NOP or Continue previous Operation
L
H
NOP
NOP or Continue previous Operation
Idle
X
ANY
Any command allowed to bank m
Row Activating,
Active, or
Precharging
L
H
ACTIVE
Select and activate row
L
H
L
H
READ
Select column & start read burst
8
L
H
L
WRITE
Select column & start write burst
8
L
H
L
PRECHARGE
Precharge
Read with Auto
Precharge
disabled
L
H
ACTIVE
Select and activate row
L
H
L
H
READ
Select column & start new read burst
8
L
H
L
WRITE
Select column & start write burst
8,10
L
H
L
PRECHARGE
Precharge
Write with Auto
Precharge
disabled
L
H
ACTIVE
Select and activate row
L
H
L
H
READ
Select column & start read burst
8, 9
L
H
L
WRITE
Select column & start new write burst
8
L
H
L
PRECHARGE
Precharge
Read with Auto
Precharge
L
H
ACTIVE
Select and activate row
L
H
L
H
READ
Select column & start new read burst
5, 8
L
H
L
WRITE
Select column & start write burst
5, 8, 10
L
H
L
PRECHARGE
Precharge
Write with Auto
Precharge
L
H
ACTIVE
Select and activate row
L
H
L
H
READ
Select column & start read burst
5, 8
L
H
L
WRITE
Select column & start new write burst
5, 8
L
H
L
PRECHARGE
Precharge
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相关代理商/技术参数 |
参数描述 |
|---|---|
| W949D2KBJX5E | 制造商:Winbond Electronics Corp 功能描述:512M MDDR, X32, 200MHZ 制造商:Winbond Electronics Corp 功能描述:IC MEMORY |
| W949D2KBJX5I | 制造商:Winbond Electronics Corp 功能描述:IC MEMORY |
| W949D2KBJX6E | 制造商:Winbond Electronics Corp 功能描述:512M MDDR, X32, 166MHZ 制造商:Winbond Electronics Corp 功能描述:IC MEMORY |
| W949D6CB | 制造商:WINBOND 制造商全称:Winbond 功能描述:512Mb Mobile LPDDR |
| W949D6CBHX5E | 功能描述:IC LPDDR SDRAM 512MBIT 60VFBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1 系列:- 格式 - 存储器:闪存 存储器类型:闪存 - NAND 存储容量:4G（256M x 16） 速度:- 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:48-TFSOP（0.724"，18.40mm 宽） 供应商设备封装:48-TSOP I 包装:Digi-Reel® 其它名称:557-1461-6 |
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