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| 型号： | W949D2CBJX6G |
| 厂商： | WINBOND ELECTRONICS CORP |
| 元件分类： | DRAM |
| 英文描述： | 16M X 32 DDR DRAM, 5 ns, PBGA90 |
| 封装： | 8 X 13 MM, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, VFBGA-90 |
| 文件页数： | 14/60页 |
| 文件大小： | 1160K |
| 代理商： | W949D2CBJX6G |
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W949D6CB / W949D2CB
512Mb Mobile LPDDR
Publication Release Date: Jun, 14, 2011
- 21 -
Revision A01-006
6.11.3 Truth Table - DM Operations
FUNCTION
DM
DQ
NOTES
Write Enable
L
Valid
1
Write Inhibit
H
X
1
Notes:
1.
Used to mask write data, provided coincident with the corresponding data.
6.11.4 Truth Table - CKE
CKEn-1
CKEn
CURRENT STATE
COMMANDn
ACTIONn
NOTES
L
Power Down
X
Maintain Power Down
L
Self Refresh
X
Maintain Self Refresh
L
Deep Power Down
X
Maintain Deep Power Down
L
H
Power Down
NOP or DESELECT
Exit Power Down
5, 6, 9
L
H
Self Refresh
NOP or DESELECT
Exit Self Refresh
5, 7, 10
L
H
Deep Power Down
NOP or DESELECT
Exit Deep Power Down
5, 8
H
L
All Banks Idle
NOP or DESELECT
Precharge Power Down Entry
5
H
L
Bank(s) Active
NOP or DESELECT
Active Power Down Entry
5
H
L
All Banks Idle
AUTO REFRESH
Self Refresh Entry
H
L
All Banks Idle
BURST TERMINATE
Enter Deep Power Down
H
See the other Truth Tables
Notes:
1.
CKEn is the logic state of CKE at clock edge n; CKEn-1 was the state of CKE at the previous clock edge.
2.
Current state is the state of LPDDR SDRAM immediately prior to clock edge n.
3.
COMMANDn is the command registered at clock edge n, and ACTIONn is the result of COMMANDn.
4.
All states and sequences not shown are illegal or reserved.
5.
DESELECT and NOP are functionally interchangeable.
6.
Power Down exit time (tXP) should elapse before a command other than NOP or DESELECT is issued.
7.
SELF REFRESH exit time (tXSR) should elapse before a command other than NOP or DESELECT is issued.
8.
The Deep Power-Down exit procedure must be followed as discussed in the Deep Power-Down section of the Functional
Description.
9.
The clock must toggle at least once during the tXP period.
10.
The clock must toggle at least once during the tXSR time.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| W949D2KBJX5E | 制造商:Winbond Electronics Corp 功能描述:512M MDDR, X32, 200MHZ 制造商:Winbond Electronics Corp 功能描述:IC MEMORY |
| W949D2KBJX5I | 制造商:Winbond Electronics Corp 功能描述:IC MEMORY |
| W949D2KBJX6E | 制造商:Winbond Electronics Corp 功能描述:512M MDDR, X32, 166MHZ 制造商:Winbond Electronics Corp 功能描述:IC MEMORY |
| W949D6CB | 制造商:WINBOND 制造商全称:Winbond 功能描述:512Mb Mobile LPDDR |
| W949D6CBHX5E | 功能描述:IC LPDDR SDRAM 512MBIT 60VFBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1 系列:- 格式 - 存储器:闪存 存储器类型:闪存 - NAND 存储容量:4G（256M x 16） 速度:- 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:48-TFSOP（0.724"，18.40mm 宽） 供应商设备封装:48-TSOP I 包装:Digi-Reel® 其它名称:557-1461-6 |
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