参数资料
型号: W981216BH-6
厂商: WINBOND ELECTRONICS CORP
元件分类: DRAM
英文描述: 8M X 16 SYNCHRONOUS DRAM, 5 ns, PDSO54
封装: 0.400 INCH, 0.80 MM PITCH, TSOP2-54
文件页数: 39/43页
文件大小: 1380K
代理商: W981216BH-6
W981216BH
Publication Release Date: September 20, 2001
- 5 -
Revision A3
5. PIN DESCRIPTION
PIN NUMBER PIN NAME
FUNCTION
DESCRIPTION
23
26, 22,
29
35
A0
A11
Address
Multiplexed pins for row and column address.
Row address: A0
A11. Column address: A0 A8.
20, 21
BS0, BS1
Bank Select
Select bank to activate during row address latch time,
or bank to read/write during address latch time.
2, 4, 5, 7, 8,
10, 11, 13, 42,
44, 45, 47, 48,
50, 51, 53
DQ0
DQ15
Data Input/
Output
Multiplexed pins for data output and input.
19
CS
Chip Select
Disable or enable the command decoder. When
command decoder is disabled, new command is
ignored and previous operation continues.
18
RAS
Row Address
Strobe
Command input. When sampled at the rising edge of
the clock, RAS , CAS and WE define the
operation to be executed.
17
CAS
Column Address
Strobe
Referred to RAS
16
WE
Write Enable
Referred to RAS
39, 15
UDQM/
LDQM
Input/Output
Mask
The output buffer is placed at Hi-Z (with latency of 2)
when DQM is sampled high in read cycle. In write
cycle, sampling DQM high will block the write
operation with zero latency.
38
CLK
Clock Inputs
System clock used to sample inputs on the rising edge
of clock.
37
CKE
Clock Enable
CKE controls the clock activation and deactivation.
When CKE is low, Power Down mode, Suspend mode
or Self Refresh mode is entered.
1, 14, 27
VCC
Power (+3.3V)
Power for input buffers and logic circuit inside DRAM.
28, 41, 54
VSS
Ground
Ground for input buffers and logic circuit inside DRAM.
3, 9, 43, 49
VCCQ
Power (+3.3V)
for I/O Buffer
Separated power from VCC, used for output buffers to
improve noise.
6, 12, 46, 52
VSSQ
Ground for I/O
Buffer
Separated ground from VSS, used for output buffers to
improve noise.
36, 40
NC
No Connection
No connection
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