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| 型号： | W9825G2DB-6 |
| 厂商： | WINBOND ELECTRONICS CORP |
| 元件分类： | DRAM |
| 英文描述： | 8M X 32 SYNCHRONOUS DRAM, 5 ns, PBGA90 |
| 封装： | 8 X 13 MM, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-90 |
| 文件页数： | 12/42页 |
| 文件大小： | 916K |
| 代理商： | W9825G2DB-6 |
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W9825G2DB
Publication Release Date:Jun. 24, 2009
- 2 -
Revision A8
9.3
Capacitance....................................................................................................................... 13
9.4
DC Characteristics............................................................................................................. 14
9.5
AC Characteristics and Operating Condition..................................................................... 15
10. TIMING WAVEFORMS ................................................................................................................17
10.1 Command Input Timing ..................................................................................................... 17
10.2 Read Timing ...................................................................................................................... 18
10.3 Control Timing of Input/Output Data.................................................................................. 19
10.4 Mode Register Set Cycle................................................................................................... 20
11. OPERATING TIMING EXAMPLE................................................................................................. 21
11.1 Interleaved Bank Read (Burst Length = 4, CAS Latency = 3)........................................... 21
11.2 Interleaved Bank Read (Burst Length = 4, CAS Latency = 3, Auto-precharge)................ 22
11.3 Interleaved Bank Read (Burst Length = 8, CAS Latency = 3)........................................... 23
11.4 Interleaved Bank Read (Burst Length = 8, CAS Latency = 3, Auto-precharge)................ 24
11.5 Interleaved Bank Write (Burst Length = 8) ........................................................................ 25
11.6 Interleaved Bank Write (Burst Length = 8, Auto-precharge) ............................................. 26
11.7 Page Mode Read (Burst Length = 4, CAS Latency = 3) ................................................... 27
11.8 Page Mode Read / Write (Burst Length = 8, CAS Latency = 3)........................................ 28
11.9 Auto-precharge Read (Burst Length = 4, CAS Latency = 3)............................................. 29
11.10 Auto-precharge Write (Burst Length = 4) .......................................................................... 30
11.11 Auto Refresh Cycle............................................................................................................ 31
11.12 Self Refresh Cycle............................................................................................................. 32
11.13 Burst Read and Single Write (Burst Length = 4, CAS Latency = 3).................................. 33
11.14 Power-down Mode............................................................................................................. 34
11.15 Auto-precharge Timing (Read Cycle)................................................................................ 35
11.16 Auto-precharge Timing (Write Cycle) ................................................................................ 36
11.17 Timing Chart of Read to Write Cycle................................................................................. 37
11.18 Timing Chart of Write to Read Cycle................................................................................. 37
11.19 Timing Chart of Burst Stop Cycle (Burst Stop Command) ................................................ 38
11.20 Timing Chart of Burst Stop Cycle (Precharge Command) ................................................ 38
11.21 CKE/DQM Input Timing (Write Cycle) ............................................................................... 39
11.22 CKE/DQM Input Timing (Read Cycle)............................................................................... 40
12. PACKAGE SPECIFICATION ....................................................................................................... 41
13. REVISION HISTORY ................................................................................................................... 42
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相关代理商/技术参数 |
参数描述 |
|---|---|
| W9825G2JB | 制造商:WINBOND 制造商全称:Winbond 功能描述:2M ? 4 BANKS ? 32BITS SDRAM |
| W9825G2JB-6 | 制造商:Winbond Electronics Corp 功能描述:DRAM Chip SDRAM 256M-Bit 8Mx32 3.3V 90-Pin TFBGA 制造商:Winbond Electronics Corp 功能描述:IC SDRAM 256MBIT 166MHZ 制造商:Winbond Electronics Corp 功能描述:IC SDRAM 256MBIT 166MHZ 90TFBGA |
| W9825G2JB-6I | 制造商:Winbond Electronics Corp 功能描述:DRAM Chip SDRAM 256M-Bit 8Mx32 3.3V 90-Pin TFBGA 制造商:Winbond Electronics Corp 功能描述:IC SDRAM 256MBIT 166MHZ 90TFBGA |
| W9825G2JB-75 | 制造商:Winbond Electronics Corp 功能描述:DRAM Chip SDRAM 256M-Bit 8Mx32 3.3V 90-Pin TFBGA 制造商:Winbond Electronics Corp 功能描述:IC SDRAM 256MBIT 133MHZ 90TFBGA |
| W9825G6CH-75 | 制造商:Winbond Electronics Corp 功能描述:16*16bit SDRAM |
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