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参数资料
| 型号： | W9825G2DB-6 |
| 厂商： | WINBOND ELECTRONICS CORP |
| 元件分类： | DRAM |
| 英文描述： | 8M X 32 SYNCHRONOUS DRAM, 5 ns, PBGA90 |
| 封装： | 8 X 13 MM, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-90 |
| 文件页数： | 23/42页 |
| 文件大小： | 916K |
| 代理商： | W9825G2DB-6 |
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W9825G2DB
Publication Release Date: Jun. 24, 2009
- 3 -
Revision A8
1. GENERAL DESCRIPTION
W9825G2DB is a high-speed synchronous dynamic random access memory (SDRAM), organized as
2,097,152 words
× 4 banks × 32 bits. Using pipelined architecture and 0.11 m process technology,
W9825G2DB delivers a data bandwidth of up to 166M words per second (-6). For different application,
W9825G2DB is sorted into two speed grades: -6, -75. The -6/-6I is compliant to the 166MHz/CL3
specification, (the -6I grade which is guaranteed to support -40°C ~ 85°C) ,the -75/75I is compliant to
the PC133/CL3 specification (the 75I grade which is guaranteed to support -40°C ~ 85°C).
Accesses to the SDRAM are burst oriented. Consecutive memory location in one page can be
accessed at a burst length of 1, 2, 4, 8 or full page when a bank and row is selected by an ACTIVE
command. Column addresses are automatically generated by the SDRAM internal counter in burst
operation. Random column read is also possible by providing its address at each clock cycle. The
multiple bank nature enables interleaving among internal banks to hide the precharging time.
By having a programmable Mode Register, the system can change burst length, latency cycle,
interleave or sequential burst to maximize its performance. W9825G2DB is ideal for main memory in
high performance applications.
2. FEATURES
3.3V
± 0.3V for -6 speed grades power supply
2.7V~3.6V for -6I/-75/75I speed grades power supply
Up to 166 MHz Clock Frequency
2,097,152 Words
× 4 banks × 32 bits organization
Self Refresh Mode: Standard and Low Power
CAS Latency: 2 and 3
Burst Length: 1, 2, 4, 8 and full page
Burst Read, Single Writes Mode
Byte Data Controlled by DQM
Auto-precharge and Controlled Precharge
4K Refresh cycles / 64 mS
Package: 90 Balls TFBGA, using Pb free with RoHS compliant
3. AVAILABLE PART NUMBER
PART NUMBER
SPEED GRADE
SELF REFRESH
CURRENT (MAX)
OPERATING
TEMPERATURE
W9825G2DB-6
166MHz/CL3
3mA
0°C ~ 70°C
W9825G2DB-6I
166MHz/CL3
3mA
-40°C ~ 85°C
W9825G2DB-75
133MHz/CL3
3mA
0°C ~ 70°C
W9825G2DB75I
133MHz/CL3
3mA
-40°C ~ 85°C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| W9825G2JB | 制造商:WINBOND 制造商全称:Winbond 功能描述:2M ? 4 BANKS ? 32BITS SDRAM |
| W9825G2JB-6 | 制造商:Winbond Electronics Corp 功能描述:DRAM Chip SDRAM 256M-Bit 8Mx32 3.3V 90-Pin TFBGA 制造商:Winbond Electronics Corp 功能描述:IC SDRAM 256MBIT 166MHZ 制造商:Winbond Electronics Corp 功能描述:IC SDRAM 256MBIT 166MHZ 90TFBGA |
| W9825G2JB-6I | 制造商:Winbond Electronics Corp 功能描述:DRAM Chip SDRAM 256M-Bit 8Mx32 3.3V 90-Pin TFBGA 制造商:Winbond Electronics Corp 功能描述:IC SDRAM 256MBIT 166MHZ 90TFBGA |
| W9825G2JB-75 | 制造商:Winbond Electronics Corp 功能描述:DRAM Chip SDRAM 256M-Bit 8Mx32 3.3V 90-Pin TFBGA 制造商:Winbond Electronics Corp 功能描述:IC SDRAM 256MBIT 133MHZ 90TFBGA |
| W9825G6CH-75 | 制造商:Winbond Electronics Corp 功能描述:16*16bit SDRAM |
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