参数资料
型号: W9825G2DB-6
厂商: WINBOND ELECTRONICS CORP
元件分类: DRAM
英文描述: 8M X 32 SYNCHRONOUS DRAM, 5 ns, PBGA90
封装: 8 X 13 MM, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-90
文件页数: 8/42页
文件大小: 916K
代理商: W9825G2DB-6
W9825G2DB
Publication Release Date:Jun. 24, 2009
- 16 -
Revision A8
Notes:
1. Operation exceeds “Absolute Maximum Ratings” may cause permanent damage to the devices.
2. All voltages are referenced to VSS
2.7V~3.6V power supply for -6I/-75/75I speed grades.
3. These parameters depend on the cycle rate and listed values are measured at a cycle rate with the
minimum values of tCK and tRC.
4. These parameters depend on the output loading conditions. Specified values are obtained with
output open.
5. Power up sequence is further described in the “Functional Description” section.
6. AC Test Load diagram.
50 ohms
1.4 V
AC TEST LOAD
Z = 50 ohms
output
30pF
7. Transition times are measured between VIH and VIL.
8. tHZ defines the time at which the outputs achieve the open circuit condition and is not referenced to
output level.
9. Assumed input rise and fall time (tT) = 1nS.
If tr & tf is longer than 1nS, transient time compensation should be considered,
i.e., [(tr + tf)/2-1]nS should be added to the parameter
(The tT maximum can’t be more than 10nS for low frequency application.)
10. If clock transiton time tT is longer than 1nS, [(tT/2)-0.5]nS should be added to the parameter.
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