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参数资料
| 型号： | W987X6CBN80 |
| 厂商： | WINBOND ELECTRONICS CORP |
| 元件分类： | DRAM |
| 英文描述： | 8M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 |
| 封装： | 8 X 9 MM, 1.20 MM HEIGHT, FBGA-54 |
| 文件页数： | 12/46页 |
| 文件大小： | 1634K |
| 代理商： | W987X6CBN80 |
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Preliminary W987X6CB
- 2 -
Interleaved Bank Read (Burst Length = 8, CAS Latency = 3, Auto Precharge).............................27
Interleaved Bank Write (Burst Length = 8) .....................................................................................28
Interleaved Bank Write (Burst Length = 8, Auto Precharge) ..........................................................29
Page Mode Read (Burst Length = 4, CAS Latency = 3) ................................................................30
Page Mode Read/Write (Burst Length = 8, CAS Latency = 3) .......................................................31
Auto Precharge Read (Burst Length = 4, CAS Latency = 3)..........................................................32
Auto Precharge Write (Burst Length = 4) .......................................................................................33
Auto Refresh Cycle.........................................................................................................................34
Self Refresh Cycle ..........................................................................................................................35
Burst Read and Single Write (Burst Length = 4, CAS Latency = 3) ...............................................36
Power Down Mode .........................................................................................................................37
Auto Precharge Timing (Read Cycle).............................................................................................38
Auto Precharge Timing (Write Cycle) .............................................................................................39
Timing Chart of Read to Write Cycle ..............................................................................................40
Timing Chart of Write to Read Cycle ..............................................................................................40
Timing Chart of Burst Stop Cycle (Burst Stop Command) .............................................................41
Timing Chart of Burst Stop Cycle (Precharge Command) .............................................................41
CKE/DQM Input Timing (Write Cycle) ............................................................................................42
CKE/DQM Input Timing (Read Cycle) ............................................................................................43
Self Refresh/Power Down Mode Exit Timing..................................................................................44
15. PACKAGE DIMENSION ..................................................................................................................45
16. REVISION HISTORY.......................................................................................................................46
相关PDF资料 |
PDF描述 |
|---|---|
| W987X6CBG75 | 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54 |
| W987Y6CBG80 | 8M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 |
| W987Z6CHG75 | 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 |
| W989D2CBJX6E | 16M X 32 DDR DRAM, 5.4 ns, PBGA90 |
| W989D6CBGX7E | 32M X 16 DDR DRAM, 5.4 ns, PBGA54 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| W987Y6CBN | 制造商:未知厂家 制造商全称:未知厂家 功能描述:DRAM |
| W987Z6CBN | 制造商:未知厂家 制造商全称:未知厂家 功能描述:DRAM |
| W988D2FB | 制造商:WINBOND 制造商全称:Winbond 功能描述:256Mb Mobile LPSDR |
| W988D2FBJX6E | 制造商:Winbond Electronics Corp 功能描述:IC LPSDR SDRAM 256MBIT 90VFBGA |
| W988D2FBJX6I | 制造商:WINBOND 制造商全称:Winbond 功能描述:256Mb Mobile LPSDR |
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