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参数资料
| 型号： | W987X6CBN80 |
| 厂商： | WINBOND ELECTRONICS CORP |
| 元件分类： | DRAM |
| 英文描述： | 8M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 |
| 封装： | 8 X 9 MM, 1.20 MM HEIGHT, FBGA-54 |
| 文件页数： | 23/46页 |
| 文件大小： | 1634K |
| 代理商： | W987X6CBN80 |
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Preliminary W987X6CB
Publication Release Date: June 6, 2002
- 3 -
Revision A1
1. GENERAL DESCRIPTION
W987X6CB is a high-speed synchronous dynamic random access memory (SDRAM), organized as
2M words
× 4 banks × 16 bits. Using pipelined architecture and 0.175 m process technology,
W987X6CB delivers a data bandwidth of up to 125M words per second (-8). For different application,
W987X6CB is sorted into two speed grades: -75 and -8. The -75 is compliant to the 133 MHz/CL3
specification; the -8 is compliant to the 125 MHz/CL3 specification. For handheld device application,
these parts are specially designed with several power saving mechanisms to achieve extremely low
Self Refresh Current.
Accesses to the SDRAM are burst oriented. Consecutive memory location in one page can be
accessed at a burst length of 1, 2, 4, 8 or full page when a bank and row is selected by an ACTIVE
command. Column addresses are automatically generated by the SDRAM internal counter in burst
operation. Random column read is also possible by providing its address at each clock cycle. The
multiple bank nature enables interleaving among internal banks to hide the precharging time.
By having a programmable Mode Register, the system can change burst length, latency cycle,
interleave or sequential burst to maximize its performance. W987X6CB is ideal for main memory in
high performance applications.
2. FEATURES
Power supply VDD = 2.5V
±0.2V
VDDQ = 1.8V
Standard Self Refresh Mode
Power Down Mode
CAS Latency: 2 and 3
Burst Length: 1, 2, 4, 8, and full page
4K Refresh cycles / 64 mS
Interface: LVTTL
Packaged in 54 balls FBGA,
Operating Temperature Range
Commercial temperature (0
° C 70° C)
Industrial temperature
(-40
° C 85° C)
3. AVAILABLE PART NUMBER
PART NUMBER
SPEED
SELF REFRESH
CURRENT (MAX.)
TEMPERATURE
RANGE
LEAD-FREE
PACKAGE
W987X6CBN75
133 MHz/CL3
400
A
0
° C 70° C
No
W987X6CBG75
133 MHz/CL3
400
A
0
° C 70° C
Yes
W987X6CBN80
125 MHz/CL3
400
A
0
° C 70° C
No
W987X6CBG80
125 MHz/CL3
400
A
0
° C 70° C
Yes
相关PDF资料 |
PDF描述 |
|---|---|
| W987X6CBG75 | 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54 |
| W987Y6CBG80 | 8M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 |
| W987Z6CHG75 | 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 |
| W989D2CBJX6E | 16M X 32 DDR DRAM, 5.4 ns, PBGA90 |
| W989D6CBGX7E | 32M X 16 DDR DRAM, 5.4 ns, PBGA54 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| W987Y6CBN | 制造商:未知厂家 制造商全称:未知厂家 功能描述:DRAM |
| W987Z6CBN | 制造商:未知厂家 制造商全称:未知厂家 功能描述:DRAM |
| W988D2FB | 制造商:WINBOND 制造商全称:Winbond 功能描述:256Mb Mobile LPSDR |
| W988D2FBJX6E | 制造商:Winbond Electronics Corp 功能描述:IC LPSDR SDRAM 256MBIT 90VFBGA |
| W988D2FBJX6I | 制造商:WINBOND 制造商全称:Winbond 功能描述:256Mb Mobile LPSDR |
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