参数资料
型号: W987X6CBN80
厂商: WINBOND ELECTRONICS CORP
元件分类: DRAM
英文描述: 8M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54
封装: 8 X 9 MM, 1.20 MM HEIGHT, FBGA-54
文件页数: 42/46页
文件大小: 1634K
代理商: W987X6CBN80
Preliminary W987X6CB
Publication Release Date: June 6, 2002
- 5 -
Revision A1
5. BALL DESCRIPTION
PIN NUMBER
BALL NAME
FUNCTION
DESCRIPTION
H7, H8, J8, J7,
J3, J2, H3, H2,
H1, G3, H9, G2
A0
A11
Address
Multiplexed pins for row and column address.
Row address: A0
A11. Column address: A0 A8.
G7, G8
BS0, BS1
Bank Select
Select bank to activate during row address latch
time, or bank to read/write during address latch
time.
A8, B9, B8, C9,
C8, D9, D8, E9,
E1, D2 D1, C2,
C1, B2, B1, A2
DQ0
DQ15
Data Input/
Output
Multiplexed pins for data output and input.
G9
CS
Chip Select
Disable or enable the command decoder. When
command decoder is disabled, new command is
ignored and previous operation continues.
F8
RAS
Row Address
Strobe
Command input. When sampled at the rising edge
of the clock, RAS , CAS and WE define the
operation to be executed.
F7
CAS
Column
Address Strobe
Referred to RAS
F9
WE
Write Enable
Referred to RAS
F1, E8
UDQM
LDQM
Input/Output
Mask
The output buffer is placed at Hi-Z (with latency of
2) when DQM is sampled high in read cycle. In write
cycle, sampling DQM high will block the write
operation with zero latency.
F2
CLK
Clock Inputs
System clock used to sample inputs on the rising
edge of clock.
F3
CKE
Clock Enable
CKE controls the clock activation and deactivation.
When CKE is low, Power Down mode, Suspend
mode or Self Refresh mode is entered.
A9, E7, J9
VDD
Power
Power for input buffers and logic circuit inside
DRAM.
A1, E3, J1
VSS
Ground
Ground for input buffers and logic circuit inside
DRAM.
A7, B3, C7, D3
VDDQ
Power for I/O
Buffer
Separated power from VCC, used for output buffers
to improve noise.
A3, B7, C3, D7
VSSQ
Ground for I/O
Buffer
Separated ground from VSS, used for output buffers
to improve noise.
E2, G1
NC
No Connection No connection
相关PDF资料
PDF描述
W987X6CBG75 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
W987Y6CBG80 8M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54
W987Z6CHG75 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
W989D2CBJX6E 16M X 32 DDR DRAM, 5.4 ns, PBGA90
W989D6CBGX7E 32M X 16 DDR DRAM, 5.4 ns, PBGA54
相关代理商/技术参数
参数描述
W987Y6CBN 制造商:未知厂家 制造商全称:未知厂家 功能描述:DRAM
W987Z6CBN 制造商:未知厂家 制造商全称:未知厂家 功能描述:DRAM
W988D2FB 制造商:WINBOND 制造商全称:Winbond 功能描述:256Mb Mobile LPSDR
W988D2FBJX6E 制造商:Winbond Electronics Corp 功能描述:IC LPSDR SDRAM 256MBIT 90VFBGA
W988D2FBJX6I 制造商:WINBOND 制造商全称:Winbond 功能描述:256Mb Mobile LPSDR