参数资料
型号: ZXM64P02XTC
厂商: Diodes Inc
文件页数: 4/7页
文件大小: 0K
描述: MOSFET P-CHAN 20V MSOP8
标准包装: 4,000
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 3.5A
开态Rds(最大)@ Id, Vgs @ 25° C: 90 毫欧 @ 2.4A,4.5V
Id 时的 Vgs(th)(最大): 700mV @ 250µA
闸电荷(Qg) @ Vgs: 6.9nC @ 4.5V
输入电容 (Ciss) @ Vds: 900pF @ 15V
功率 - 最大: 1.1W
安装类型: 表面贴装
封装/外壳: 8-TSSOP,8-MSOP(0.118",3.00mm 宽)
供应商设备封装: 8-MSOP
包装: 带卷 (TR)
ZXM64P02X
ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V (BR)DSS
-20
V
I D =-250 μ A, V GS =0V
Zero Gate Voltage Drain Current
I DSS
-1
μ A
V DS =-20V, V GS =0V
Gate-Body Leakage
I GSS
± 100
nA
V GS = ± 12V, V DS =0V
Gate-Source Threshold Voltage
V GS(th)
-0.7
V
I D =-250 μ A, V DS = V GS
Static Drain-Source On-State Resistance
(1)
R DS(on)
0.090
0.13
?
?
V GS =-4.5V, I D =-2.4A
V GS =-2.7V, I D =-1.2A
Forward Transconductance (3)
g fs
2.6
S
V DS =-10V,I D =-1.2A
DYNAMIC (3)
Input Capacitance
C iss
900
pF
Output Capacitance
C oss
350
pF
V DS =-15 V, V GS =0V,
f=1MHz
Reverse Transfer Capacitance
C rss
150
pF
SWITCHING (2) (3)
Turn-On Delay Time
t d(on)
5.6
ns
Rise Time
Turn-Off Delay Time
t r
t d(off)
12.3
45.5
ns
ns
V DD =-10V, I D =-2.4A
R G =6.0 ? , R D =4.0 ?
(Refer to test circuit)
Fall Time
t f
40.0
ns
Total Gate Charge
Q g
6.9
nC
Gate-Source Charge
Q gs
1.3
nC
V DS =-16V,V GS =-4.5V,
I D =-2.4A
Gate Drain Charge
Q gd
2.5
nC
(Refer to test circuit)
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V SD
-0.95
V
T j =25°C, I S =-2.4A,
V GS =0V
Reverse Recovery Time (3)
Reverse Recovery Charge(3)
t rr
Q rr
46.0
35.0
ns
nC
T j =25°C, I F =-2.4A,
di/dt= 100A/ μ s
(1) Measured under pulsed conditions. Width=300 μ s. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
I ssue 2 - February 2008
4
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